Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides

The formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints a...

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Main Authors: Ju Won Choi, Byoung-Uk Sohn, George F. R. Chen, Doris K. T. Ng, Dawn T. H. Tan
Format: Article
Language:English
Published: AIP Publishing LLC 2019-11-01
Series:APL Photonics
Online Access:http://dx.doi.org/10.1063/1.5113758
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author Ju Won Choi
Byoung-Uk Sohn
George F. R. Chen
Doris K. T. Ng
Dawn T. H. Tan
author_facet Ju Won Choi
Byoung-Uk Sohn
George F. R. Chen
Doris K. T. Ng
Dawn T. H. Tan
author_sort Ju Won Choi
collection DOAJ
description The formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints and lower operating powers compared to fiber-based equivalents. High-order solitons evolve periodically as they propagate and experience a temporal narrowing at the start of each soliton period. This phenomenon allows strong temporal compression of optical pulses to be achieved. In this paper, soliton-effect temporal compression of optical pulses is demonstrated on a CMOS-compatible ultra-silicon-rich nitride (USRN) waveguide. We achieve 8.7× compression of 2 ps optical pulses using a low pulse energy of ∼16 pJ, representing the largest demonstrated compression on an integrated photonic waveguide to date. The strong temporal compression is confirmed by numerical calculations of the nonlinear Schrödinger equation to be attributed to the USRN waveguide’s large nonlinearity and negligible two-photon absorption at 1550 nm.
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spelling doaj.art-93217a5709174ca895e1ecd467af75302022-12-22T02:43:21ZengAIP Publishing LLCAPL Photonics2378-09672019-11-01411110804110804-710.1063/1.5113758Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguidesJu Won Choi0Byoung-Uk Sohn1George F. R. Chen2Doris K. T. Ng3Dawn T. H. Tan4Photonics Devices and System Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Rd., Singapore 487372, SingaporePhotonics Devices and System Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Rd., Singapore 487372, SingaporePhotonics Devices and System Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Rd., Singapore 487372, SingaporeInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-02, Innovis Tower, Singapore 138634Photonics Devices and System Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Rd., Singapore 487372, SingaporeThe formation of optical solitons arises from the simultaneous presence of dispersive and nonlinear properties within a propagation medium. Chip-scale devices that support optical solitons harness high field confinement and flexibility in dispersion engineering for significantly smaller footprints and lower operating powers compared to fiber-based equivalents. High-order solitons evolve periodically as they propagate and experience a temporal narrowing at the start of each soliton period. This phenomenon allows strong temporal compression of optical pulses to be achieved. In this paper, soliton-effect temporal compression of optical pulses is demonstrated on a CMOS-compatible ultra-silicon-rich nitride (USRN) waveguide. We achieve 8.7× compression of 2 ps optical pulses using a low pulse energy of ∼16 pJ, representing the largest demonstrated compression on an integrated photonic waveguide to date. The strong temporal compression is confirmed by numerical calculations of the nonlinear Schrödinger equation to be attributed to the USRN waveguide’s large nonlinearity and negligible two-photon absorption at 1550 nm.http://dx.doi.org/10.1063/1.5113758
spellingShingle Ju Won Choi
Byoung-Uk Sohn
George F. R. Chen
Doris K. T. Ng
Dawn T. H. Tan
Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
APL Photonics
title Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
title_full Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
title_fullStr Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
title_full_unstemmed Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
title_short Soliton-effect optical pulse compression in CMOS-compatible ultra-silicon-rich nitride waveguides
title_sort soliton effect optical pulse compression in cmos compatible ultra silicon rich nitride waveguides
url http://dx.doi.org/10.1063/1.5113758
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AT dorisktng solitoneffectopticalpulsecompressionincmoscompatibleultrasiliconrichnitridewaveguides
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