A novel high‐voltage solid‐state switch based on the SiC MOSFET series and its overcurrent protection
Abstract All‐solid‐state switches are one of the core components of pulsed power supply systems. However, the voltage level of a single switch is limited. By optimizing the chip structure, the voltage level of a single switch can be improved. Due to the immaturity of the production process and the p...
Main Authors: | Dazhao He, Wenjie Sun, Yixin Liao, Penghao Zhang, Liang Yu, Shoulong Dong, Chenguo Yao, Xin liu |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2023-08-01
|
Series: | High Voltage |
Online Access: | https://doi.org/10.1049/hve2.12285 |
Similar Items
-
A Gate Driver Based on Variable Voltage and Resistance for Suppressing Overcurrent and Overvoltage of SiC MOSFETs
by: Jiangui Chen, et al.
Published: (2019-04-01) -
Series Capacitance Gate Driver to Suppress Voltage Oscillation of SiC MOSFET
by: Sheng Dou, et al.
Published: (2024-01-01) -
Voltage division investigation of series short‐circuit fault on SiC MOSFETs and Si IGBTs
by: Zhang Jingwei, et al.
Published: (2023-02-01) -
Switching Investigation of SiC MOSFET Based 4-Quadrant Switch
by: Nishant Anurag, et al.
Published: (2023-01-01) -
High‐speed high‐voltage solid‐state Marx generator based on SiC MOSFETs
by: S. Mohammad Dehghan, et al.
Published: (2023-05-01)