Ultrathin high band gap solar cells with improved efficiencies from the world’s oldest photovoltaic material
Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve photoconversion efficiencies of 6.5%.
Main Authors: | Teodor K. Todorov, Saurabh Singh, Douglas M. Bishop, Oki Gunawan, Yun Seog Lee, Talia S. Gershon, Kevin W. Brew, Priscilla D. Antunez, Richard Haight |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Portfolio
2017-09-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-017-00582-9 |
Similar Items
-
Ultrathin polymeric films for interfacial passivation in wide band-gap perovskite solar cells
by: Parnian Ferdowsi, et al.
Published: (2020-12-01) -
Optical Manipulation of Incident Light for Enhanced Photon Absorption in Ultrathin Organic Photovoltaics
by: Seungyeon Han, et al.
Published: (2022-11-01) -
A study of the band gap of sensitized titanium dioxide nanoparticles and their photovoltaic applications
by: Ozuomba, J., et al.
Published: (2013-06-01) -
Narrow band gap lead sulfide hole transport layers for quantum dot photovoltaics
by: Zhang, N, et al.
Published: (2016) -
A wide band gap devices based switched-capacitor circuits for photovoltaic applications
by: Mohammed Alsolami
Published: (2022-01-01)