Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels
Summary: The factors that affect the electrical ideality and photoresponse in near-infrared (NIR) organic phototransistors (OPTs) are still nebulous. Here, simultaneous increase in electrical ideality and NIR response in the OPTs is realized by applying a bulk heterojunction (BHJ) channel. The accep...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2022-01-01
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| Series: | iScience |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2589004221016813 |
| _version_ | 1798016351602737152 |
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| author | Ning Li Yanlian Lei Yanqin Miao Furong Zhu |
| author_facet | Ning Li Yanlian Lei Yanqin Miao Furong Zhu |
| author_sort | Ning Li |
| collection | DOAJ |
| description | Summary: The factors that affect the electrical ideality and photoresponse in near-infrared (NIR) organic phototransistors (OPTs) are still nebulous. Here, simultaneous increase in electrical ideality and NIR response in the OPTs is realized by applying a bulk heterojunction (BHJ) channel. The acceptor in the channel helps to trap the undesirable injected electrons, avoiding the accumulation of the electrons at the active channel/dielectric interface, and thereby improving the hole transporting. Use of a BHJ channel also helps reducing the contact resistance in the OPTs. The electrical stability is then improved with mitigated dependence of charge mobility on gate voltage in the saturation region. The BHJ channel also offers an improved photoresponse through enhanced exciton dissociation, leading to more than one order of magnitude increase in responsivity than that in a control OPT. The results are encouraging, which pave the way for the development of high-performing NIR OPTs. |
| first_indexed | 2024-04-11T15:49:17Z |
| format | Article |
| id | doaj.art-935ed7f5a43f450e8fe0a63fe80af5b2 |
| institution | Directory Open Access Journal |
| issn | 2589-0042 |
| language | English |
| last_indexed | 2024-04-11T15:49:17Z |
| publishDate | 2022-01-01 |
| publisher | Elsevier |
| record_format | Article |
| series | iScience |
| spelling | doaj.art-935ed7f5a43f450e8fe0a63fe80af5b22022-12-22T04:15:26ZengElsevieriScience2589-00422022-01-01251103711Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channelsNing Li0Yanlian Lei1Yanqin Miao2Furong Zhu3Department of Physics, Research Centre of Excellence for Organic Electronics, and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong, ChinaDepartment of Physics, Research Centre of Excellence for Organic Electronics, and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong, China; School of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaDepartment of Physics, Research Centre of Excellence for Organic Electronics, and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong, China; Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, China; Corresponding authorDepartment of Physics, Research Centre of Excellence for Organic Electronics, and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong, China; Corresponding authorSummary: The factors that affect the electrical ideality and photoresponse in near-infrared (NIR) organic phototransistors (OPTs) are still nebulous. Here, simultaneous increase in electrical ideality and NIR response in the OPTs is realized by applying a bulk heterojunction (BHJ) channel. The acceptor in the channel helps to trap the undesirable injected electrons, avoiding the accumulation of the electrons at the active channel/dielectric interface, and thereby improving the hole transporting. Use of a BHJ channel also helps reducing the contact resistance in the OPTs. The electrical stability is then improved with mitigated dependence of charge mobility on gate voltage in the saturation region. The BHJ channel also offers an improved photoresponse through enhanced exciton dissociation, leading to more than one order of magnitude increase in responsivity than that in a control OPT. The results are encouraging, which pave the way for the development of high-performing NIR OPTs.http://www.sciencedirect.com/science/article/pii/S2589004221016813OptoelectronicsElectronic engineeringElectronic materialsOptical Materials |
| spellingShingle | Ning Li Yanlian Lei Yanqin Miao Furong Zhu Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels iScience Optoelectronics Electronic engineering Electronic materials Optical Materials |
| title | Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels |
| title_full | Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels |
| title_fullStr | Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels |
| title_full_unstemmed | Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels |
| title_short | Improved electrical ideality and photoresponse in near-infrared phototransistors realized by bulk heterojunction channels |
| title_sort | improved electrical ideality and photoresponse in near infrared phototransistors realized by bulk heterojunction channels |
| topic | Optoelectronics Electronic engineering Electronic materials Optical Materials |
| url | http://www.sciencedirect.com/science/article/pii/S2589004221016813 |
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