Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage
With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage, leading to sensing failure. Previous studies indic...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-09-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/10/1145 |
| _version_ | 1797513835759796224 |
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| author | Kyung Min Koo Woo Young Chung Sang Yi Lee Gyu Han Yoon Woo Young Choi |
| author_facet | Kyung Min Koo Woo Young Chung Sang Yi Lee Gyu Han Yoon Woo Young Choi |
| author_sort | Kyung Min Koo |
| collection | DOAJ |
| description | With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage, leading to sensing failure. Previous studies indicate that the threshold voltage mismatch between the paired transistors of a sense amplifier is the most critical factor. In this study, virtual wafers were generated, including statistical V<sub>T</sub> variation. Then, we numerically investigate the prediction accuracy and reliability of the offset voltage of DRAM wafers using test point measurement for the first time. We expect that this study will be helpful in strengthening the in-line controllability of wafers to secure the DRAM sensing margin. |
| first_indexed | 2024-03-10T06:23:12Z |
| format | Article |
| id | doaj.art-93746b9e9c5543f68aaf4b20eebe963e |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T06:23:12Z |
| publishDate | 2021-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-93746b9e9c5543f68aaf4b20eebe963e2023-11-22T19:10:29ZengMDPI AGMicromachines2072-666X2021-09-011210114510.3390/mi12101145Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset VoltageKyung Min Koo0Woo Young Chung1Sang Yi Lee2Gyu Han Yoon3Woo Young Choi4Department of Electronics Engineering, Sogang University, Seoul 04107, KoreaDepartment of DRAM Sensing & Advanced Analysis, SK Hynix, Icheon 17336, KoreaDepartment of DRAM Sensing & Advanced Analysis, SK Hynix, Icheon 17336, KoreaDepartment of Electronics Engineering, Sogang University, Seoul 04107, KoreaDepartment of Electronics Engineering, Sogang University, Seoul 04107, KoreaWith the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage, leading to sensing failure. Previous studies indicate that the threshold voltage mismatch between the paired transistors of a sense amplifier is the most critical factor. In this study, virtual wafers were generated, including statistical V<sub>T</sub> variation. Then, we numerically investigate the prediction accuracy and reliability of the offset voltage of DRAM wafers using test point measurement for the first time. We expect that this study will be helpful in strengthening the in-line controllability of wafers to secure the DRAM sensing margin.https://www.mdpi.com/2072-666X/12/10/1145dynamic random access memorysense amplifiersensitivityoffset voltagevariationthreshold voltage mismatch |
| spellingShingle | Kyung Min Koo Woo Young Chung Sang Yi Lee Gyu Han Yoon Woo Young Choi Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage Micromachines dynamic random access memory sense amplifier sensitivity offset voltage variation threshold voltage mismatch |
| title | Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage |
| title_full | Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage |
| title_fullStr | Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage |
| title_full_unstemmed | Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage |
| title_short | Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage |
| title_sort | modeling of statistical variation effects on dram sense amplifier offset voltage |
| topic | dynamic random access memory sense amplifier sensitivity offset voltage variation threshold voltage mismatch |
| url | https://www.mdpi.com/2072-666X/12/10/1145 |
| work_keys_str_mv | AT kyungminkoo modelingofstatisticalvariationeffectsondramsenseamplifieroffsetvoltage AT wooyoungchung modelingofstatisticalvariationeffectsondramsenseamplifieroffsetvoltage AT sangyilee modelingofstatisticalvariationeffectsondramsenseamplifieroffsetvoltage AT gyuhanyoon modelingofstatisticalvariationeffectsondramsenseamplifieroffsetvoltage AT wooyoungchoi modelingofstatisticalvariationeffectsondramsenseamplifieroffsetvoltage |