Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE
<p>Abstract</p> <p>The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/180 |
| _version_ | 1797705932042403840 |
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| author | Henini Mohamed Mari Riaz Shafi Muhammad Aziz Mohsin Khatab Almontaser Taylor David |
| author_facet | Henini Mohamed Mari Riaz Shafi Muhammad Aziz Mohsin Khatab Almontaser Taylor David |
| author_sort | Henini Mohamed |
| collection | DOAJ |
| description | <p>Abstract</p> <p>The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as <it>p</it>-type dopant. In this study we will report on the properties of hole traps in a set of <it>p</it>-type Be-doped Al<sub>0.29</sub>Ga0<sub>.71</sub>As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 10<sup>16 </sup>to 1 × 10<sup>17 </sup>cm<sup>-3 </sup>the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100).</p> |
| first_indexed | 2024-03-12T05:43:40Z |
| format | Article |
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| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T05:43:40Z |
| publishDate | 2011-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-9383e62aa92d4aeb8976a2ceade43cb52023-09-03T05:48:33ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161180Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBEHenini MohamedMari RiazShafi MuhammadAziz MohsinKhatab AlmontaserTaylor David<p>Abstract</p> <p>The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as <it>p</it>-type dopant. In this study we will report on the properties of hole traps in a set of <it>p</it>-type Be-doped Al<sub>0.29</sub>Ga0<sub>.71</sub>As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 10<sup>16 </sup>to 1 × 10<sup>17 </sup>cm<sup>-3 </sup>the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100).</p>http://www.nanoscalereslett.com/content/6/1/180 |
| spellingShingle | Henini Mohamed Mari Riaz Shafi Muhammad Aziz Mohsin Khatab Almontaser Taylor David Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE Nanoscale Research Letters |
| title | Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE |
| title_full | Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE |
| title_fullStr | Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE |
| title_full_unstemmed | Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE |
| title_short | Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE |
| title_sort | electrical characterisation of deep level defects in be doped algaas grown on 100 and 311 a gaas substrates by mbe |
| url | http://www.nanoscalereslett.com/content/6/1/180 |
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