Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/20/e3sconf_tt21c2023_04041.pdf |
| _version_ | 1797835320535810048 |
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| author | Donaev S.B. Shirinov G.M. Ergasheva S. Rakhimov A.M. Wang Shenghao Abduvayitov A.A. |
| author_facet | Donaev S.B. Shirinov G.M. Ergasheva S. Rakhimov A.M. Wang Shenghao Abduvayitov A.A. |
| author_sort | Donaev S.B. |
| collection | DOAJ |
| description | Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms. |
| first_indexed | 2024-04-09T14:51:07Z |
| format | Article |
| id | doaj.art-93ac3149c4de4afb96438a20f6647c0c |
| institution | Directory Open Access Journal |
| issn | 2267-1242 |
| language | English |
| last_indexed | 2024-04-09T14:51:07Z |
| publishDate | 2023-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | E3S Web of Conferences |
| spelling | doaj.art-93ac3149c4de4afb96438a20f6647c0c2023-05-02T09:28:43ZengEDP SciencesE3S Web of Conferences2267-12422023-01-013830404110.1051/e3sconf/202338304041e3sconf_tt21c2023_04041Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped siliconDonaev S.B.0Shirinov G.M.1Ergasheva S.2Rakhimov A.M.3Wang Shenghao4Abduvayitov A.A.5Tashkent State Technical UniversityTashkent State Technical UniversityTashkent State Pedagogical UniversityTashkent State Technical UniversityMaterials Genome Institute, Shanghai UniversityTashkent State Technical UniversityAuger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms.https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/20/e3sconf_tt21c2023_04041.pdf |
| spellingShingle | Donaev S.B. Shirinov G.M. Ergasheva S. Rakhimov A.M. Wang Shenghao Abduvayitov A.A. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon E3S Web of Conferences |
| title | Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon |
| title_full | Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon |
| title_fullStr | Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon |
| title_full_unstemmed | Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon |
| title_short | Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon |
| title_sort | study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion doped silicon |
| url | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/20/e3sconf_tt21c2023_04041.pdf |
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