Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon
Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2023-01-01
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| Series: | E3S Web of Conferences |
| Online Access: | https://www.e3s-conferences.org/articles/e3sconf/pdf/2023/20/e3sconf_tt21c2023_04041.pdf |