Study of CMOS Sensing System for Radon and Alpha Radiation

This study focuses on a CMOS sensing system for Radon and alpha radiation, which is based on a semiconductor device that is integrated monolithically on a single chip with the Readout Circuitry, thus allowing fabrication of a low-power and low-cost sensing system. The new sensor is based on a new mo...

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Main Authors: Roy Shor, Yael Nemirovsky
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Radiation
Subjects:
Online Access:https://www.mdpi.com/2673-592X/1/3/21
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author Roy Shor
Yael Nemirovsky
author_facet Roy Shor
Yael Nemirovsky
author_sort Roy Shor
collection DOAJ
description This study focuses on a CMOS sensing system for Radon and alpha radiation, which is based on a semiconductor device that is integrated monolithically on a single chip with the Readout Circuitry, thus allowing fabrication of a low-power and low-cost sensing system. The new sensor is based on a new mosaic design of an array of Floating Gate non-volatile memory-like transistors, which are implemented in a standard CMOS technology, with a single polysilicon layer. The transistors are electrically combined in parallel and are operated at subthreshold, thus achieving very high sensitivity and reduced noise. The sensing system’s architecture and design is presented, along with key operation concepts, characterization, and analysis results. Alpha and radon exposure results are compared to commercial radon detectors. The new sensor, dubbed TODOS-Radon sensor, measures continuously, is battery operated and insensitive to humidity.
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spelling doaj.art-93add7502ff44c2d995269298d9410a02023-11-22T15:02:27ZengMDPI AGRadiation2673-592X2021-09-011325026010.3390/radiation1030021Study of CMOS Sensing System for Radon and Alpha RadiationRoy Shor0Yael Nemirovsky1Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, IsraelDepartment of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, IsraelThis study focuses on a CMOS sensing system for Radon and alpha radiation, which is based on a semiconductor device that is integrated monolithically on a single chip with the Readout Circuitry, thus allowing fabrication of a low-power and low-cost sensing system. The new sensor is based on a new mosaic design of an array of Floating Gate non-volatile memory-like transistors, which are implemented in a standard CMOS technology, with a single polysilicon layer. The transistors are electrically combined in parallel and are operated at subthreshold, thus achieving very high sensitivity and reduced noise. The sensing system’s architecture and design is presented, along with key operation concepts, characterization, and analysis results. Alpha and radon exposure results are compared to commercial radon detectors. The new sensor, dubbed TODOS-Radon sensor, measures continuously, is battery operated and insensitive to humidity.https://www.mdpi.com/2673-592X/1/3/21radonalpha radiationCMOS sensorsilicon radiation detectorionizing radiation sensorfloating gate transistor
spellingShingle Roy Shor
Yael Nemirovsky
Study of CMOS Sensing System for Radon and Alpha Radiation
Radiation
radon
alpha radiation
CMOS sensor
silicon radiation detector
ionizing radiation sensor
floating gate transistor
title Study of CMOS Sensing System for Radon and Alpha Radiation
title_full Study of CMOS Sensing System for Radon and Alpha Radiation
title_fullStr Study of CMOS Sensing System for Radon and Alpha Radiation
title_full_unstemmed Study of CMOS Sensing System for Radon and Alpha Radiation
title_short Study of CMOS Sensing System for Radon and Alpha Radiation
title_sort study of cmos sensing system for radon and alpha radiation
topic radon
alpha radiation
CMOS sensor
silicon radiation detector
ionizing radiation sensor
floating gate transistor
url https://www.mdpi.com/2673-592X/1/3/21
work_keys_str_mv AT royshor studyofcmossensingsystemforradonandalpharadiation
AT yaelnemirovsky studyofcmossensingsystemforradonandalpharadiation