Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field

It is high of commercial importance to generate the grain refinement in alloys during solidification by means of electromagnetic fields. Two typical patterns of electromagnetic fields, pulsed electric currents (ECP) and traveling magnetic field (TMF), are frequently employed to produce the finer equ...

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Main Authors: Yunhu Zhang, Xiangru Cheng, Honggang Zhong, Zhishuai Xu, Lijuan Li, Yongyong Gong, Xincheng Miao, Changjiang Song, Qijie Zhai
Format: Article
Language:English
Published: MDPI AG 2016-07-01
Series:Metals
Subjects:
Online Access:http://www.mdpi.com/2075-4701/6/7/170
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author Yunhu Zhang
Xiangru Cheng
Honggang Zhong
Zhishuai Xu
Lijuan Li
Yongyong Gong
Xincheng Miao
Changjiang Song
Qijie Zhai
author_facet Yunhu Zhang
Xiangru Cheng
Honggang Zhong
Zhishuai Xu
Lijuan Li
Yongyong Gong
Xincheng Miao
Changjiang Song
Qijie Zhai
author_sort Yunhu Zhang
collection DOAJ
description It is high of commercial importance to generate the grain refinement in alloys during solidification by means of electromagnetic fields. Two typical patterns of electromagnetic fields, pulsed electric currents (ECP) and traveling magnetic field (TMF), are frequently employed to produce the finer equiaxed grains in solidifying alloys. Various mechanisms were proposed to understand the grain refinement in alloys caused by ECP and TMF. In this paper, a comparative study is carried out in the same solidification regime to investigate the grain refinement of Al-7 wt. %Si alloy driven by ECP and TMF. Experimental results show that the application of ECP or TMF can cause the same grain refinement occurrence period, during which the refinement of primary Al continuously occurs. In addition, the related grain refinement mechanisms are reviewed and discussed, which shows the most likely one caused by ECP and TMF is the promoted dendrite fragmentation as the result of the ECP-induced or TMF-induced forced flow. It suggests that the same grain refinement process in alloys is provoked when ECP and TMF are applied in the same solidification regime, respectively.
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spelling doaj.art-93b376c49ec44bf886ad7dfefabdbb252022-12-21T23:36:01ZengMDPI AGMetals2075-47012016-07-016717010.3390/met6070170met6070170Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic FieldYunhu Zhang0Xiangru Cheng1Honggang Zhong2Zhishuai Xu3Lijuan Li4Yongyong Gong5Xincheng Miao6Changjiang Song7Qijie Zhai8State Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaCollege of Science, Shanghai University, Shanghai 200444, ChinaSchool of Materials Science and Engineering, University of Science and Technology Liaoning, Liaoning 114051, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaState Key Laboratory of Advanced Special Steels, Shanghai University, Shanghai 200072, ChinaIt is high of commercial importance to generate the grain refinement in alloys during solidification by means of electromagnetic fields. Two typical patterns of electromagnetic fields, pulsed electric currents (ECP) and traveling magnetic field (TMF), are frequently employed to produce the finer equiaxed grains in solidifying alloys. Various mechanisms were proposed to understand the grain refinement in alloys caused by ECP and TMF. In this paper, a comparative study is carried out in the same solidification regime to investigate the grain refinement of Al-7 wt. %Si alloy driven by ECP and TMF. Experimental results show that the application of ECP or TMF can cause the same grain refinement occurrence period, during which the refinement of primary Al continuously occurs. In addition, the related grain refinement mechanisms are reviewed and discussed, which shows the most likely one caused by ECP and TMF is the promoted dendrite fragmentation as the result of the ECP-induced or TMF-induced forced flow. It suggests that the same grain refinement process in alloys is provoked when ECP and TMF are applied in the same solidification regime, respectively.http://www.mdpi.com/2075-4701/6/7/170grain refinementsolidificationAl-Si alloyspulsed electric currenttraveling magnetic field
spellingShingle Yunhu Zhang
Xiangru Cheng
Honggang Zhong
Zhishuai Xu
Lijuan Li
Yongyong Gong
Xincheng Miao
Changjiang Song
Qijie Zhai
Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
Metals
grain refinement
solidification
Al-Si alloys
pulsed electric current
traveling magnetic field
title Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
title_full Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
title_fullStr Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
title_full_unstemmed Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
title_short Comparative Study on the Grain Refinement of Al-Si Alloy Solidified under the Impact of Pulsed Electric Current and Travelling Magnetic Field
title_sort comparative study on the grain refinement of al si alloy solidified under the impact of pulsed electric current and travelling magnetic field
topic grain refinement
solidification
Al-Si alloys
pulsed electric current
traveling magnetic field
url http://www.mdpi.com/2075-4701/6/7/170
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