Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment
Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O<sub>3</sub>, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-11-01
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| Series: | Inorganics |
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| Online Access: | https://www.mdpi.com/2304-6740/10/12/228 |
| _version_ | 1797457143073341440 |
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| author | Kwangeun Kim Jaewon Jang |
| author_facet | Kwangeun Kim Jaewon Jang |
| author_sort | Kwangeun Kim |
| collection | DOAJ |
| description | Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O<sub>3</sub>, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to Si/GaAs tunnel junctions (TJs). The atomic-scale features of the H-O-terminated Si/GaAs TJ were analyzed and compared to those of Si/GaAs heterojunctions with no UVO treatment. The electrical characteristics demonstrated the emergence of negative differential resistance, with an average peak-to-valley current ratio of 3.49, which was examined based on the band-to-band tunneling and thermionic emission theories. |
| first_indexed | 2024-03-09T16:17:56Z |
| format | Article |
| id | doaj.art-93d5d18926f14076b5c0ef3f4061ac11 |
| institution | Directory Open Access Journal |
| issn | 2304-6740 |
| language | English |
| last_indexed | 2024-03-09T16:17:56Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Inorganics |
| spelling | doaj.art-93d5d18926f14076b5c0ef3f4061ac112023-11-24T15:38:05ZengMDPI AGInorganics2304-67402022-11-01101222810.3390/inorganics10120228Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface TreatmentKwangeun Kim0Jaewon Jang1School of Electronics and Information Engineering, Korea Aerospace University, Goyang 10540, Republic of KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, Republic of KoreaHere, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O<sub>3</sub>, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to Si/GaAs tunnel junctions (TJs). The atomic-scale features of the H-O-terminated Si/GaAs TJ were analyzed and compared to those of Si/GaAs heterojunctions with no UVO treatment. The electrical characteristics demonstrated the emergence of negative differential resistance, with an average peak-to-valley current ratio of 3.49, which was examined based on the band-to-band tunneling and thermionic emission theories.https://www.mdpi.com/2304-6740/10/12/228inorganic semiconductorcompound semiconductornanomembraneheterostructureultraviolet/ozone treatment |
| spellingShingle | Kwangeun Kim Jaewon Jang Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment Inorganics inorganic semiconductor compound semiconductor nanomembrane heterostructure ultraviolet/ozone treatment |
| title | Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment |
| title_full | Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment |
| title_fullStr | Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment |
| title_full_unstemmed | Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment |
| title_short | Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment |
| title_sort | improved tunneling property of p si nanomembrane n gaas heterostructures through ultraviolet ozone interface treatment |
| topic | inorganic semiconductor compound semiconductor nanomembrane heterostructure ultraviolet/ozone treatment |
| url | https://www.mdpi.com/2304-6740/10/12/228 |
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