Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits
The use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen t...
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MDPI AG
2021-03-01
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| Online Access: | https://www.mdpi.com/2673-3978/2/2/6 |
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| author | John Barron Alec Pickett James Glaser Suchismita Guha |
| author_facet | John Barron Alec Pickett James Glaser Suchismita Guha |
| author_sort | John Barron |
| collection | DOAJ |
| description | The use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen to improve carrier mobility and reduce leakage current when compared to unpoled devices using the same dielectric. For n-type FETs, solution-processed ZnO films provide a viable low-cost option. UV–ozone-treated ZnO films was seen to improve the FET performance due to the filling of oxygen vacancies. P-type FETs were fabricated using the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the dielectric along with a donor–acceptor polymer based on diketopyrrolopyrrole (DPP-DTT) as the semiconductor layer. The DPP-DTT FETs yield carrier mobilities upwards of 0.4 cm<sup>2</sup>/Vs and high on/off ratios when the PVDF-TrFE layer is electrically poled. For n-type FETs, UV–ozone-treated sol–gel ZnO films on SiO<sub>2</sub> yield carrier mobilities of 10<sup>−2</sup> cm<sup>2</sup>/Vs. DPP-DTT-based p- and ZnO-based n-type FETs were used in a complementary voltage inverter circuit, showing promising characteristic gain. A basic inverter model was used to simulate the inverter characteristics, using parameters from the individual FET characteristics. |
| first_indexed | 2024-03-10T09:53:00Z |
| format | Article |
| id | doaj.art-93de6e9109e243809c37dee9ddab6339 |
| institution | Directory Open Access Journal |
| issn | 2673-3978 |
| language | English |
| last_indexed | 2024-03-10T09:53:00Z |
| publishDate | 2021-03-01 |
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| record_format | Article |
| series | Electronic Materials |
| spelling | doaj.art-93de6e9109e243809c37dee9ddab63392023-11-22T02:37:06ZengMDPI AGElectronic Materials2673-39782021-03-0122607110.3390/electronicmat2020006Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary CircuitsJohn Barron0Alec Pickett1James Glaser2Suchismita Guha3Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USADepartment of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USADepartment of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USADepartment of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USAThe use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen to improve carrier mobility and reduce leakage current when compared to unpoled devices using the same dielectric. For n-type FETs, solution-processed ZnO films provide a viable low-cost option. UV–ozone-treated ZnO films was seen to improve the FET performance due to the filling of oxygen vacancies. P-type FETs were fabricated using the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the dielectric along with a donor–acceptor polymer based on diketopyrrolopyrrole (DPP-DTT) as the semiconductor layer. The DPP-DTT FETs yield carrier mobilities upwards of 0.4 cm<sup>2</sup>/Vs and high on/off ratios when the PVDF-TrFE layer is electrically poled. For n-type FETs, UV–ozone-treated sol–gel ZnO films on SiO<sub>2</sub> yield carrier mobilities of 10<sup>−2</sup> cm<sup>2</sup>/Vs. DPP-DTT-based p- and ZnO-based n-type FETs were used in a complementary voltage inverter circuit, showing promising characteristic gain. A basic inverter model was used to simulate the inverter characteristics, using parameters from the individual FET characteristics.https://www.mdpi.com/2673-3978/2/2/6field-effect transistorconjugated polymerZnOcomplementary circuitferroelectric polymer |
| spellingShingle | John Barron Alec Pickett James Glaser Suchismita Guha Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits Electronic Materials field-effect transistor conjugated polymer ZnO complementary circuit ferroelectric polymer |
| title | Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits |
| title_full | Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits |
| title_fullStr | Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits |
| title_full_unstemmed | Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits |
| title_short | Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits |
| title_sort | solution processed organic and zno field effect transistors in complementary circuits |
| topic | field-effect transistor conjugated polymer ZnO complementary circuit ferroelectric polymer |
| url | https://www.mdpi.com/2673-3978/2/2/6 |
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