Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor
This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first ti...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-06-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/20/11/3329 |
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| author | Stefan Ilić Aleksandar Jevtić Srboljub Stanković Goran Ristić |
| author_facet | Stefan Ilić Aleksandar Jevtić Srboljub Stanković Goran Ristić |
| author_sort | Stefan Ilić |
| collection | DOAJ |
| description | This paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD. |
| first_indexed | 2024-03-09T06:12:49Z |
| format | Article |
| id | doaj.art-93dfd374cde54fc4bcef9d95a8cb3f54 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T06:12:49Z |
| publishDate | 2020-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-93dfd374cde54fc4bcef9d95a8cb3f542023-12-03T11:57:13ZengMDPI AGSensors1424-82202020-06-012011332910.3390/s20113329Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation SensorStefan Ilić0Aleksandar Jevtić1Srboljub Stanković2Goran Ristić3Applied Physics Laboratory, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaApplied Physics Laboratory, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaDepartment of Radiation and Environmental Protection, “Vinča” Institute of Nuclear Sciences, 11351 Belgrade, SerbiaApplied Physics Laboratory, Faculty of Electronic Engineering, University of Niš, 18000 Niš, SerbiaThis paper describes the possibility of using an Electrically Programmable Analog Device (EPAD) as a gamma radiation sensor. Zero-biased EPAD has the lowest fading and the highest sensitivity in the 300 Gy dose range. Dynamic bias of the control gate during irradiation was presented for the first time; this method achieved higher sensitivity compared to static-biased EPADs and better linear dependence. Due to the degradation of the transfer characteristics of EPAD during irradiation, a function of the safe operation area has been found that determines the maximum voltage at the control gate for the desired dose, which will not lead to degradation of the transistor. Using an energy band diagram, it was explained why the zero-biased EPAD has higher sensitivity than the static-biased EPAD.https://www.mdpi.com/1424-8220/20/11/3329floating-gate MOS transistorionizing radiation sensorZTCsemiconductor dosimetertransistor dynamic biasing |
| spellingShingle | Stefan Ilić Aleksandar Jevtić Srboljub Stanković Goran Ristić Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor Sensors floating-gate MOS transistor ionizing radiation sensor ZTC semiconductor dosimeter transistor dynamic biasing |
| title | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor |
| title_full | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor |
| title_fullStr | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor |
| title_full_unstemmed | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor |
| title_short | Floating-Gate MOS Transistor with Dynamic Biasing as a Radiation Sensor |
| title_sort | floating gate mos transistor with dynamic biasing as a radiation sensor |
| topic | floating-gate MOS transistor ionizing radiation sensor ZTC semiconductor dosimeter transistor dynamic biasing |
| url | https://www.mdpi.com/1424-8220/20/11/3329 |
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