MYSTERIES OF GAN
Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correl...
| Format: | Article |
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| Language: | Arabic |
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Tishreen University
2018-12-01
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| Series: | مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية |
| Online Access: | http://www.journal.tishreen.edu.sy/index.php/bassnc/article/view/4976 |
| Summary: | Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correlations between structural quality of thin films of GaN and their light emission properties. Then, the mechanisms responsible for strong carrier/excitons localization effects are discussed. Finally, I discuss properties of n- and p-type doped GaN layers.
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| ISSN: | 2079-3057 2663-4252 |