MYSTERIES OF GAN
Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correl...
| Format: | Article |
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| Language: | Arabic |
| Published: |
Tishreen University
2018-12-01
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| Series: | مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية |
| Online Access: | http://www.journal.tishreen.edu.sy/index.php/bassnc/article/view/4976 |
| _version_ | 1797419235669966848 |
|---|---|
| collection | DOAJ |
| description |
Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correlations between structural quality of thin films of GaN and their light emission properties. Then, the mechanisms responsible for strong carrier/excitons localization effects are discussed. Finally, I discuss properties of n- and p-type doped GaN layers.
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| first_indexed | 2024-03-09T06:44:32Z |
| format | Article |
| id | doaj.art-93ea80337aa048bc9deff8fd5613356a |
| institution | Directory Open Access Journal |
| issn | 2079-3057 2663-4252 |
| language | Arabic |
| last_indexed | 2024-03-09T06:44:32Z |
| publishDate | 2018-12-01 |
| publisher | Tishreen University |
| record_format | Article |
| series | مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية |
| spelling | doaj.art-93ea80337aa048bc9deff8fd5613356a2023-12-03T10:38:35ZaraTishreen Universityمجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية2079-30572663-42522018-12-01272MYSTERIES OF GAN Despite of all successes in commercialization of GaN-based devices present knowledge of light emission mechanisms in these devices is surprisingly limited. In my talk I discussed several puzzling properties of wide band gap nitrides. Some of them are briefly described below. First, I discuss correlations between structural quality of thin films of GaN and their light emission properties. Then, the mechanisms responsible for strong carrier/excitons localization effects are discussed. Finally, I discuss properties of n- and p-type doped GaN layers. http://www.journal.tishreen.edu.sy/index.php/bassnc/article/view/4976 |
| spellingShingle | MYSTERIES OF GAN مجلة جامعة تشرين للبحوث والدراسات العلمية، سلسلة العلوم الأساسية |
| title | MYSTERIES OF GAN |
| title_full | MYSTERIES OF GAN |
| title_fullStr | MYSTERIES OF GAN |
| title_full_unstemmed | MYSTERIES OF GAN |
| title_short | MYSTERIES OF GAN |
| title_sort | mysteries of gan |
| url | http://www.journal.tishreen.edu.sy/index.php/bassnc/article/view/4976 |