Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon
Negative differential resistance (NDR) devices have recently attracted interest as multi-valued logic (MVL) circuits, owing to their folded electrical characteristics. However, with necessity of sophisticated computing systems, advanced NDR devices are required for stable low-power-consumption MVL c...
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| Format: | Article |
| Language: | English |
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Elsevier
2024-03-01
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| Series: | Materials Today Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049824000122 |
| _version_ | 1797258670569947136 |
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| author | Kyu Hyun Han Seung-Geun Kim Seung-Hwan Kim Jong-Hyun Kim Seong-Hyun Hwang Min-Su Kim Sung-Joo Song Hyun-Yong Yu |
| author_facet | Kyu Hyun Han Seung-Geun Kim Seung-Hwan Kim Jong-Hyun Kim Seong-Hyun Hwang Min-Su Kim Sung-Joo Song Hyun-Yong Yu |
| author_sort | Kyu Hyun Han |
| collection | DOAJ |
| description | Negative differential resistance (NDR) devices have recently attracted interest as multi-valued logic (MVL) circuits, owing to their folded electrical characteristics. However, with necessity of sophisticated computing systems, advanced NDR devices are required for stable low-power-consumption MVL circuits. Here, we developed van der Waals (vdW) NDR device with high peak-to-valley current ratio (PVCR) and low peak voltage (Vpeak), utilizing the passivation and doping effects of APTES layer as aminosilane coupling agent, at dielectric interface. The PVCR of NDR device reached 10 through reduced interface trap owing to the passivation effect of APTES silane group. Additionally, low Vpeak of NDR device was achieved at 0.2 V through doping effect of the APTES amine group. These PVCR and Vpeak values indicate the one of the best vdW NDR performance. Furthermore, stable logic state and low operation voltage of the ternary inverter were implemented using NDR device with high PVCR and low Vpeak. This NDR device represents a significant advancement for next-generation MVL technologies. |
| first_indexed | 2024-03-07T19:09:30Z |
| format | Article |
| id | doaj.art-93f829ce55234bb092f638cd50fc90e1 |
| institution | Directory Open Access Journal |
| issn | 2590-0498 |
| language | English |
| last_indexed | 2024-04-24T22:57:14Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Today Advances |
| spelling | doaj.art-93f829ce55234bb092f638cd50fc90e12024-03-18T04:34:32ZengElsevierMaterials Today Advances2590-04982024-03-0121100475Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenonKyu Hyun Han0Seung-Geun Kim1Seung-Hwan Kim2Jong-Hyun Kim3Seong-Hyun Hwang4Min-Su Kim5Sung-Joo Song6Hyun-Yong Yu7School of Electrical Engineering, Korea University, Seoul 02841, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, Seoul 02841, South KoreaCenter for Spintronics, Korea Institute of Science and Technology (KIST), Seoul 02792, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, Seoul 02841, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, Seoul 02841, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, Seoul 02841, South KoreaDepartment of Semiconductor Systems Engineering, Korea University, Seoul 02841, South KoreaSchool of Electrical Engineering, Korea University, Seoul 02841, South Korea; Corresponding author.Negative differential resistance (NDR) devices have recently attracted interest as multi-valued logic (MVL) circuits, owing to their folded electrical characteristics. However, with necessity of sophisticated computing systems, advanced NDR devices are required for stable low-power-consumption MVL circuits. Here, we developed van der Waals (vdW) NDR device with high peak-to-valley current ratio (PVCR) and low peak voltage (Vpeak), utilizing the passivation and doping effects of APTES layer as aminosilane coupling agent, at dielectric interface. The PVCR of NDR device reached 10 through reduced interface trap owing to the passivation effect of APTES silane group. Additionally, low Vpeak of NDR device was achieved at 0.2 V through doping effect of the APTES amine group. These PVCR and Vpeak values indicate the one of the best vdW NDR performance. Furthermore, stable logic state and low operation voltage of the ternary inverter were implemented using NDR device with high PVCR and low Vpeak. This NDR device represents a significant advancement for next-generation MVL technologies.http://www.sciencedirect.com/science/article/pii/S2590049824000122Negative differential resistancePeak voltagePeak-to-valley current ratioTernary inverterMulti-valued logic |
| spellingShingle | Kyu Hyun Han Seung-Geun Kim Seung-Hwan Kim Jong-Hyun Kim Seong-Hyun Hwang Min-Su Kim Sung-Joo Song Hyun-Yong Yu Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon Materials Today Advances Negative differential resistance Peak voltage Peak-to-valley current ratio Ternary inverter Multi-valued logic |
| title | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| title_full | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| title_fullStr | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| title_full_unstemmed | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| title_short | Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| title_sort | dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon |
| topic | Negative differential resistance Peak voltage Peak-to-valley current ratio Ternary inverter Multi-valued logic |
| url | http://www.sciencedirect.com/science/article/pii/S2590049824000122 |
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