Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators

Abstract The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it...

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Main Authors: Gang Shi, Fan Gao, Zhilin Li, Rencong Zhang, Igor Gornyi, Dmitri Gutman, Yongqing Li
Format: Article
Language:English
Published: Nature Portfolio 2023-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-023-38256-4
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author Gang Shi
Fan Gao
Zhilin Li
Rencong Zhang
Igor Gornyi
Dmitri Gutman
Yongqing Li
author_facet Gang Shi
Fan Gao
Zhilin Li
Rencong Zhang
Igor Gornyi
Dmitri Gutman
Yongqing Li
author_sort Gang Shi
collection DOAJ
description Abstract The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional (2D) electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to the suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.
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spelling doaj.art-940730d3662a4e0690c38bd3bba7dc072023-05-07T11:16:49ZengNature PortfolioNature Communications2041-17232023-05-011411810.1038/s41467-023-38256-4Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulatorsGang Shi0Fan Gao1Zhilin Li2Rencong Zhang3Igor Gornyi4Dmitri Gutman5Yongqing Li6Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesInstitute for Quantum Materials and Technologies, Karlsruhe Institute of TechnologyDepartment of Physics, Bar-Ilan UniversityBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesAbstract The interplay between quantum interference, electron-electron interaction (EEI), and disorder is one of the central themes of condensed matter physics. Such interplay can cause high-order magnetoconductance (MC) corrections in semiconductors with weak spin-orbit coupling (SOC). However, it remains unexplored how the magnetotransport properties are modified by the high-order quantum corrections in the electron systems of symplectic symmetry class, which include topological insulators (TIs), Weyl semimetals, graphene with negligible intervalley scattering, and semiconductors with strong SOC. Here, we extend the theory of quantum conductance corrections to two-dimensional (2D) electron systems with the symplectic symmetry, and study experimentally such physics with dual-gated TI devices in which the transport is dominated by highly tunable surface states. We find that the MC can be enhanced significantly by the second-order interference and the EEI effects, in contrast to the suppression of MC for the systems with orthogonal symmetry. Our work reveals that detailed MC analysis can provide deep insights into the complex electronic processes in TIs, such as the screening and dephasing effects of localized charge puddles, as well as the related particle-hole asymmetry.https://doi.org/10.1038/s41467-023-38256-4
spellingShingle Gang Shi
Fan Gao
Zhilin Li
Rencong Zhang
Igor Gornyi
Dmitri Gutman
Yongqing Li
Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
Nature Communications
title Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
title_full Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
title_fullStr Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
title_full_unstemmed Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
title_short Quantum corrections to the magnetoconductivity of surface states in three-dimensional topological insulators
title_sort quantum corrections to the magnetoconductivity of surface states in three dimensional topological insulators
url https://doi.org/10.1038/s41467-023-38256-4
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