Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium
We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium dif...
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| Format: | Article |
| Language: | English |
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Pensoft Publishers
2018-09-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/39536/download/pdf/ |
| _version_ | 1797762602701422592 |
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| author | Svetlana P. Kobeleva Ilya M. Anfimov Andrei V. Turutin Sergey Yu. Yurchuk Vladimir M. Fomin |
| author_facet | Svetlana P. Kobeleva Ilya M. Anfimov Andrei V. Turutin Sergey Yu. Yurchuk Vladimir M. Fomin |
| author_sort | Svetlana P. Kobeleva |
| collection | DOAJ |
| description | We have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion. |
| first_indexed | 2024-03-12T19:30:44Z |
| format | Article |
| id | doaj.art-942951f586724f0998f309c55726de3c |
| institution | Directory Open Access Journal |
| issn | 2452-1779 |
| language | English |
| last_indexed | 2024-03-12T19:30:44Z |
| publishDate | 2018-09-01 |
| publisher | Pensoft Publishers |
| record_format | Article |
| series | Modern Electronic Materials |
| spelling | doaj.art-942951f586724f0998f309c55726de3c2023-08-02T04:36:02ZengPensoft PublishersModern Electronic Materials2452-17792018-09-014311311710.3897/j.moem.4.3.3953639536Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germaniumSvetlana P. Kobeleva0Ilya M. Anfimov1Andrei V. Turutin2Sergey Yu. Yurchuk3Vladimir M. Fomin4National University of Science and TechnologyNational University of Science and TechnologyNational University of Science and TechnologyNational University of Science and TechnologyNational University of Science and TechnologyWe have analyzed phosphorus diffusion profiles in an In0.01Ga0.99As/In0.56Ga0.44P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In0.56Ga0.44P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two p–n junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient DP depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better DP agreement with literary data. Both methods suggest the DP tendency to grow at the heterostructure boundary and to decline closer to the main p–n junction. The DP growth near the surface p–n junction the field of which is directed toward the heterostructure boundary and its decline near the main p–n junction with an oppositely directed field, as well as the observed DP growth with the electron concentration, suggest that the negatively charged VGeP complexes diffuse in the heterostructure by analogy with one-component diffusion.https://moem.pensoft.net/article/39536/download/pdf/ |
| spellingShingle | Svetlana P. Kobeleva Ilya M. Anfimov Andrei V. Turutin Sergey Yu. Yurchuk Vladimir M. Fomin Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium Modern Electronic Materials |
| title | Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| title_full | Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| title_fullStr | Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| title_full_unstemmed | Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| title_short | Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| title_sort | coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium |
| url | https://moem.pensoft.net/article/39536/download/pdf/ |
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