Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C
A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\<sup>2</sup> V<sup>-1&...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2014-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Online Access: | https://ieeexplore.ieee.org/document/6849425/ |
| _version_ | 1831538674111610880 |
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| author | S. M. Thomas Y. K. Sharma M. A. Crouch C. A. Fisher A. Perez-Tomas M. R. Jennings P. A. Mawby |
| author_facet | S. M. Thomas Y. K. Sharma M. A. Crouch C. A. Fisher A. Perez-Tomas M. R. Jennings P. A. Mawby |
| author_sort | S. M. Thomas |
| collection | DOAJ |
| description | A novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200°C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs. |
| first_indexed | 2024-12-16T23:28:14Z |
| format | Article |
| id | doaj.art-945fadb1fb264ecc97f4fb85c0aab683 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-16T23:28:14Z |
| publishDate | 2014-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-945fadb1fb264ecc97f4fb85c0aab6832022-12-21T22:11:57ZengIEEEIEEE Journal of the Electron Devices Society2168-67342014-01-012511411710.1109/JEDS.2014.23307376849425Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°CS. M. Thomas0Y. K. Sharma1M. A. Crouch2C. A. Fisher3A. Perez-Tomas4M. R. Jennings5P. A. Mawby6School of Engineering, University of Warwick, Coventry, U.KSchool of Engineering, University of Warwick, Coventry, U.KSchool of Engineering, University of Warwick, Coventry, U.KSchool of Engineering, University of Warwick, Coventry, U.KInstitut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Bellaterra, SpainSchool of Engineering, University of Warwick, Coventry, U.KSchool of Engineering, University of Warwick, Coventry, U.KA novel 1500°C gate oxidation process has been demonstrated on Si face of 4H-SiC. Lateral channel metal-oxide-semiconductor-field-effect-transistors (MOSFETs) fabricated using this process have a maximum field effect mobility of approximately 40 cm\<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> without post oxidation passivation. This is substantially higher than other reports of MOSFETs with thermally grown oxides (typically grown at the standard silicon temperature range of 1100-1200°C). This result shows the potential of a high temperature oxidation step for reducing the channel resistance (thus the overall conduction loss), in power 4H-SiC MOSFETs.https://ieeexplore.ieee.org/document/6849425/ |
| spellingShingle | S. M. Thomas Y. K. Sharma M. A. Crouch C. A. Fisher A. Perez-Tomas M. R. Jennings P. A. Mawby Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C IEEE Journal of the Electron Devices Society |
| title | Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C |
| title_full | Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C |
| title_fullStr | Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C |
| title_full_unstemmed | Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C |
| title_short | Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C |
| title_sort | enhanced field effect mobility on 4h sic by oxidation at 1500 x00b0 c |
| url | https://ieeexplore.ieee.org/document/6849425/ |
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