Formation of submicron relief structures on the surface of sapphire substrates

An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam   etching through a protective mask formed by photolithogra...

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Bibliographic Details
Main Authors: V.V. Petrov, A.A. Kryuchyn, I.V. Gorbov, A.V. Pankratova, D.Yu. Manko, Yu.O. Borodin, O.V. Shikhovets
Format: Article
Language:English
Published: Vasyl Stefanyk Precarpathian National University 2023-06-01
Series:Фізика і хімія твердого тіла
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Online Access:https://journals.pnu.edu.ua/index.php/pcss/article/view/6706
Description
Summary:An analysis of technologies that allow creating microrelief structures on the surface of sapphire substrates has been carried out. It is shown that the most effective method of forming relief structures with submicron dimensions is ion beam   etching through a protective mask formed by photolithography. The main problems in creating a microrelief on the surface of sapphire substrates are the removal of static electric charge in the process of ion beam  etching of the substrates, as well as obtaining a protective mask with windows of specified sizes, through which etching of the sapphire substrate is performed.
ISSN:1729-4428
2309-8589