Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model

This paper deals with the photothermal interaction of an isotropic, homogenous, semiconducting, viscothermoelastic solid cylinder in the context of Lord-Shulman's of generalized thermoelasticity theory. The cylinder rotates around its axis with constant angular velocity. The bounding surface of...

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Main Authors: Hamdy M. Youssef, Alaa A. El-Bary
Format: Article
Language:English
Published: Elsevier 2021-04-01
Series:Alexandria Engineering Journal
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S1110016820306591
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author Hamdy M. Youssef
Alaa A. El-Bary
author_facet Hamdy M. Youssef
Alaa A. El-Bary
author_sort Hamdy M. Youssef
collection DOAJ
description This paper deals with the photothermal interaction of an isotropic, homogenous, semiconducting, viscothermoelastic solid cylinder in the context of Lord-Shulman's of generalized thermoelasticity theory. The cylinder rotates around its axis with constant angular velocity. The bounding surface of the cylinder has been thermally shocked. The governing equations have been constructed in the Laplace transform domain and numerically calculated inversions of Laplace using the Tzou method. The numerical results for the carrier density increment, temperatures increment, strain, stress, and stress-strain energy have been represented graphically with various values mechanical relaxation time, angular velocity parameter, and lifetime parameter of a photogenerated carrier. The mechanical relaxation time and angular velocity of the rotation parameter have minimal effects on the carrier density function and temperature increment, while its effects on the strain, stress, and stress-strain energy are significant. The photogenerated carrier's lifespan parameter has essential implications on all functions studied.
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spelling doaj.art-94cfc5f388c848f38caaf32929a7e8612022-12-21T22:51:51ZengElsevierAlexandria Engineering Journal1110-01682021-04-0160220832092Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman modelHamdy M. Youssef0Alaa A. El-Bary1Mechanical Engineering Department, College of Engineering and Islamic Architecture, Umm Al-Qura University, Makkah, Saudi Arabia; Mathematics Department, Faculty of Education, Alexandria University, Alexandria, Egypt; Corresponding author.Basic and Applied Science Institute, Arab Academy for Science, Technology and Maritime Transport, P.O. Box 1029, Alexandria, EgyptThis paper deals with the photothermal interaction of an isotropic, homogenous, semiconducting, viscothermoelastic solid cylinder in the context of Lord-Shulman's of generalized thermoelasticity theory. The cylinder rotates around its axis with constant angular velocity. The bounding surface of the cylinder has been thermally shocked. The governing equations have been constructed in the Laplace transform domain and numerically calculated inversions of Laplace using the Tzou method. The numerical results for the carrier density increment, temperatures increment, strain, stress, and stress-strain energy have been represented graphically with various values mechanical relaxation time, angular velocity parameter, and lifetime parameter of a photogenerated carrier. The mechanical relaxation time and angular velocity of the rotation parameter have minimal effects on the carrier density function and temperature increment, while its effects on the strain, stress, and stress-strain energy are significant. The photogenerated carrier's lifespan parameter has essential implications on all functions studied.http://www.sciencedirect.com/science/article/pii/S1110016820306591PhotothermalGeneralized thermoelasticitySemiconductingRotationThe lifetimeCarrier density
spellingShingle Hamdy M. Youssef
Alaa A. El-Bary
Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
Alexandria Engineering Journal
Photothermal
Generalized thermoelasticity
Semiconducting
Rotation
The lifetime
Carrier density
title Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
title_full Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
title_fullStr Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
title_full_unstemmed Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
title_short Characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under Lord-Shulman model
title_sort characterization of the photothermal interaction on a viscothermoelastic semiconducting solid cylinder due to rotation under lord shulman model
topic Photothermal
Generalized thermoelasticity
Semiconducting
Rotation
The lifetime
Carrier density
url http://www.sciencedirect.com/science/article/pii/S1110016820306591
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AT alaaaelbary characterizationofthephotothermalinteractiononaviscothermoelasticsemiconductingsolidcylinderduetorotationunderlordshulmanmodel