High Efficiency Energy Harvesters in 65nm CMOS Process for Autonomous IoT Sensor Applications

High Efficiency Energy Harvesters in 65nm CMOS Process for Autonomous IoT Sensor Applications

Two integrated, highly efficient RF-to-dc rectifier circuits are presented. The rectifier circuits are based on improved Dickson charge pump models and are fabricated using 65-nm CMOS GlobalFoundries process. The designs utilize diode-connected metal-oxide-semiconductor field-effect transistors inst...

Full description

Bibliographic Details
Main Authors: Mansour Taghadosi, Lutfi Albasha, Nasir A. Quadir, Yousef Abo Rahama, Nasser Qaddoumi
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Energy harvesting
radio frequency
GSM900
CMOS process
MOSFET
power conversion efficiency
Online Access:https://ieeexplore.ieee.org/document/8214097/

Similar Items

Similar Items