Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy
Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier transport, and asymmetric 2D electronic and energy device owing to the strong in-plane anisotropy pres...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-06-01
|
| Series: | Materials Today Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590049823000395 |
| _version_ | 1797796336524853248 |
|---|---|
| author | Thalita Maysha Herninda Chin En Hsu Hung-Chung Hsueh Ching-Hwa Ho |
| author_facet | Thalita Maysha Herninda Chin En Hsu Hung-Chung Hsueh Ching-Hwa Ho |
| author_sort | Thalita Maysha Herninda |
| collection | DOAJ |
| description | Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier transport, and asymmetric 2D electronic and energy device owing to the strong in-plane anisotropy presented in the van der Waal plane. In this work, multilayered SnS1-xSex chalcogenides of x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and x = 1 were grown by chemical vapor transport and then exfoliated on a SiO2/Si substrate for further optical characterization. Polarized micro-Raman experiment and theoretical Raman-mode calculation simultaneously demonstrate strong in-plane anisotropy with the maximum Raman intensity of the armchair (AM) chain vibration mode (Ag) shows mutual orthogonality to the zigzag (ZZ) chain-oriented mode (B1g) in the full-series multilayer SnS1-xSex (0 ≤ x ≤ 1). For the intermediate compositions between x = 0.2 and x = 0.8, a crucial physical mechanism as “symmetry breaking” has been proposed to account for the increased number of separated Ag and B1g modes with different energies as compared to those detected for the binary compounds of orthorhombic SnS and SnSe. For the band-edge anisotropy, the bandgap value of ZZ polarized direction is shown to be lower than that of the AM direction for each of the SnS1-xSex compounds evidenced by polarized-thermoreflectance experiments and first-principles calculations. |
| first_indexed | 2024-03-13T03:32:37Z |
| format | Article |
| id | doaj.art-950044cf358e44ff9c8174a050013b55 |
| institution | Directory Open Access Journal |
| issn | 2590-0498 |
| language | English |
| last_indexed | 2024-03-13T03:32:37Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Materials Today Advances |
| spelling | doaj.art-950044cf358e44ff9c8174a050013b552023-06-24T05:18:54ZengElsevierMaterials Today Advances2590-04982023-06-0118100379Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropyThalita Maysha Herninda0Chin En Hsu1Hung-Chung Hsueh2Ching-Hwa Ho3Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106335, TaiwanDepartment of Physics, Tamkang University, Tamsui, New Taipei, 25137, TaiwanDepartment of Physics, Tamkang University, Tamsui, New Taipei, 25137, Taiwan; Research Center for X-ray Science, College of Science, Tamkang University, Tamsui, New Taipei, 25137, Taiwan; Corresponding author. Research Center for X-ray Science, College of Science, Tamkang University, Tamsui, New Taipei, 25137, Taiwan.Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan; College of Applied Science, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan; Corresponding author. Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan.Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier transport, and asymmetric 2D electronic and energy device owing to the strong in-plane anisotropy presented in the van der Waal plane. In this work, multilayered SnS1-xSex chalcogenides of x = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and x = 1 were grown by chemical vapor transport and then exfoliated on a SiO2/Si substrate for further optical characterization. Polarized micro-Raman experiment and theoretical Raman-mode calculation simultaneously demonstrate strong in-plane anisotropy with the maximum Raman intensity of the armchair (AM) chain vibration mode (Ag) shows mutual orthogonality to the zigzag (ZZ) chain-oriented mode (B1g) in the full-series multilayer SnS1-xSex (0 ≤ x ≤ 1). For the intermediate compositions between x = 0.2 and x = 0.8, a crucial physical mechanism as “symmetry breaking” has been proposed to account for the increased number of separated Ag and B1g modes with different energies as compared to those detected for the binary compounds of orthorhombic SnS and SnSe. For the band-edge anisotropy, the bandgap value of ZZ polarized direction is shown to be lower than that of the AM direction for each of the SnS1-xSex compounds evidenced by polarized-thermoreflectance experiments and first-principles calculations.http://www.sciencedirect.com/science/article/pii/S2590049823000395Phosphorene structureTin monochalcogenidesIn-plane anisotropyPolarized Raman spectroscopyBand-edge structure |
| spellingShingle | Thalita Maysha Herninda Chin En Hsu Hung-Chung Hsueh Ching-Hwa Ho Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy Materials Today Advances Phosphorene structure Tin monochalcogenides In-plane anisotropy Polarized Raman spectroscopy Band-edge structure |
| title | Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy |
| title_full | Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy |
| title_fullStr | Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy |
| title_full_unstemmed | Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy |
| title_short | Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy |
| title_sort | structural opto electrical and band edge properties of full series multilayer sns1 xsex 0≤x≤1 compounds with strong in plane anisotropy |
| topic | Phosphorene structure Tin monochalcogenides In-plane anisotropy Polarized Raman spectroscopy Band-edge structure |
| url | http://www.sciencedirect.com/science/article/pii/S2590049823000395 |
| work_keys_str_mv | AT thalitamayshaherninda structuraloptoelectricalandbandedgepropertiesoffullseriesmultilayersns1xsex0x1compoundswithstronginplaneanisotropy AT chinenhsu structuraloptoelectricalandbandedgepropertiesoffullseriesmultilayersns1xsex0x1compoundswithstronginplaneanisotropy AT hungchunghsueh structuraloptoelectricalandbandedgepropertiesoffullseriesmultilayersns1xsex0x1compoundswithstronginplaneanisotropy AT chinghwaho structuraloptoelectricalandbandedgepropertiesoffullseriesmultilayersns1xsex0x1compoundswithstronginplaneanisotropy |