Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy

Structural, opto-electrical, and band-edge properties of full-series multilayer SnS1-xSex (0≤x≤1) compounds with strong in-plane anisotropy

Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier transport, and asymmetric 2D electronic and energy device owing to the strong in-plane anisotropy pres...

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Bibliographic Details
Main Authors:	Thalita Maysha Herninda, Chin En Hsu, Hung-Chung Hsueh, Ching-Hwa Ho
Format:	Article
Language:	English
Published:	Elsevier 2023-06-01
Series:	Materials Today Advances
Subjects:	Phosphorene structure Tin monochalcogenides In-plane anisotropy Polarized Raman spectroscopy Band-edge structure
Online Access:	http://www.sciencedirect.com/science/article/pii/S2590049823000395

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