Optical characterization of deuterated silicon-rich nitride waveguides
Abstract Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear propertie...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-16889-7 |
| _version_ | 1818018704133193728 |
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| author | Xavier X. Chia George F. R. Chen Yanmei Cao Peng Xing Hongwei Gao Doris K. T. Ng Dawn T. H. Tan |
| author_facet | Xavier X. Chia George F. R. Chen Yanmei Cao Peng Xing Hongwei Gao Doris K. T. Ng Dawn T. H. Tan |
| author_sort | Xavier X. Chia |
| collection | DOAJ |
| description | Abstract Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si–H and N–H related absorption. The performance of identical waveguides for films grown with SiH4 and SiD4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W−1 m−1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 $$\times$$ × 10–18 m2W−1 respectively. |
| first_indexed | 2024-04-14T07:43:33Z |
| format | Article |
| id | doaj.art-9531e0035be24a07a670a6e75dde0bbd |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-04-14T07:43:33Z |
| publishDate | 2022-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-9531e0035be24a07a670a6e75dde0bbd2022-12-22T02:05:25ZengNature PortfolioScientific Reports2045-23222022-07-0112111010.1038/s41598-022-16889-7Optical characterization of deuterated silicon-rich nitride waveguidesXavier X. Chia0George F. R. Chen1Yanmei Cao2Peng Xing3Hongwei Gao4Doris K. T. Ng5Dawn T. H. Tan6Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignPhotonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignPhotonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignPhotonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignPhotonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignInstitute of Microelectronics, Agency for Science, Technology and Research (A*STAR)Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and DesignAbstract Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD4 eliminates Si–H and N–H related absorption. The performance of identical waveguides for films grown with SiH4 and SiD4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W−1 m−1, with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 $$\times$$ × 10–18 m2W−1 respectively.https://doi.org/10.1038/s41598-022-16889-7 |
| spellingShingle | Xavier X. Chia George F. R. Chen Yanmei Cao Peng Xing Hongwei Gao Doris K. T. Ng Dawn T. H. Tan Optical characterization of deuterated silicon-rich nitride waveguides Scientific Reports |
| title | Optical characterization of deuterated silicon-rich nitride waveguides |
| title_full | Optical characterization of deuterated silicon-rich nitride waveguides |
| title_fullStr | Optical characterization of deuterated silicon-rich nitride waveguides |
| title_full_unstemmed | Optical characterization of deuterated silicon-rich nitride waveguides |
| title_short | Optical characterization of deuterated silicon-rich nitride waveguides |
| title_sort | optical characterization of deuterated silicon rich nitride waveguides |
| url | https://doi.org/10.1038/s41598-022-16889-7 |
| work_keys_str_mv | AT xavierxchia opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT georgefrchen opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT yanmeicao opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT pengxing opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT hongweigao opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT dorisktng opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides AT dawnthtan opticalcharacterizationofdeuteratedsiliconrichnitridewaveguides |