Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves
Vanadium oxide (VO<sub>2</sub>), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO<su...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/12/3409 |
| _version_ | 1797501954930245632 |
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| author | Xueguang Lu Bowen Dong Hongfu Zhu Qiwu Shi Lu Tang Yidan Su Cheng Zhang Wanxia Huang Qiang Cheng |
| author_facet | Xueguang Lu Bowen Dong Hongfu Zhu Qiwu Shi Lu Tang Yidan Su Cheng Zhang Wanxia Huang Qiang Cheng |
| author_sort | Xueguang Lu |
| collection | DOAJ |
| description | Vanadium oxide (VO<sub>2</sub>), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO<sub>2</sub> has shown favorable application prospects in memory-related devices once combined with metamaterials or metasurfaces. However, to date, VO<sub>2</sub>-based memory meta-devices are usually in a single-channel read/write mode, which limits their storage capacity and speed. In this paper, we propose a reconfigurable meta-memory based on VO<sub>2</sub>, which favors a two-channel read/write mode. Our design consists of a pair of large and small split-ring resonators, and the corresponding VO<sub>2</sub> patterns are embedded in the gap locations. By controlling the external power supply, the two operation bands can be controlled independently to achieve at least four amplitude states, including “00”, “01”, “10”, and “11”, which results in a two-channel storage function. In addition, our research may provide prospective applications in fields such as THz switching, photon storage, and THz communication systems in the future. |
| first_indexed | 2024-03-10T03:26:29Z |
| format | Article |
| id | doaj.art-953926ba5c7f4d69828f22aca6e51437 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T03:26:29Z |
| publishDate | 2021-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-953926ba5c7f4d69828f22aca6e514372023-11-23T09:52:12ZengMDPI AGNanomaterials2079-49912021-12-011112340910.3390/nano11123409Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz WavesXueguang Lu0Bowen Dong1Hongfu Zhu2Qiwu Shi3Lu Tang4Yidan Su5Cheng Zhang6Wanxia Huang7Qiang Cheng8College of Materials Science and Engineering, Sichuan University, Chengdu 610065, ChinaDepartment of Basic Sciences, Air Force Engineering University, Xi’an 710051, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610065, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610065, ChinaSchool of Engineering, The University of Manchester, Manchester M13 9PL, UKHubei Engineering Research Center of RF-Microwave Technology and Application, School of Science, Wuhan University of Technology, Wuhan 430070, ChinaCollege of Materials Science and Engineering, Sichuan University, Chengdu 610065, ChinaState Key Laboratory of Millimeter Waves, Department of Radio Engineering, Southeast University, Nanjing 210096, ChinaVanadium oxide (VO<sub>2</sub>), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO<sub>2</sub> has shown favorable application prospects in memory-related devices once combined with metamaterials or metasurfaces. However, to date, VO<sub>2</sub>-based memory meta-devices are usually in a single-channel read/write mode, which limits their storage capacity and speed. In this paper, we propose a reconfigurable meta-memory based on VO<sub>2</sub>, which favors a two-channel read/write mode. Our design consists of a pair of large and small split-ring resonators, and the corresponding VO<sub>2</sub> patterns are embedded in the gap locations. By controlling the external power supply, the two operation bands can be controlled independently to achieve at least four amplitude states, including “00”, “01”, “10”, and “11”, which results in a two-channel storage function. In addition, our research may provide prospective applications in fields such as THz switching, photon storage, and THz communication systems in the future.https://www.mdpi.com/2079-4991/11/12/3409meta-memoryterahertzvanadium dioxidereconfigurable metasurface |
| spellingShingle | Xueguang Lu Bowen Dong Hongfu Zhu Qiwu Shi Lu Tang Yidan Su Cheng Zhang Wanxia Huang Qiang Cheng Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves Nanomaterials meta-memory terahertz vanadium dioxide reconfigurable metasurface |
| title | Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves |
| title_full | Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves |
| title_fullStr | Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves |
| title_full_unstemmed | Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves |
| title_short | Two-Channel VO<sub>2</sub> Memory Meta-Device for Terahertz Waves |
| title_sort | two channel vo sub 2 sub memory meta device for terahertz waves |
| topic | meta-memory terahertz vanadium dioxide reconfigurable metasurface |
| url | https://www.mdpi.com/2079-4991/11/12/3409 |
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