Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition
In this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl<sub>2</sub> precursor...
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MDPI AG
2020-09-01
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Online Access: | https://www.mdpi.com/2079-4991/10/9/1880 |
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author | Chin-Li Shen Shu-Meng Yang Kuo-Chang Lu |
author_facet | Chin-Li Shen Shu-Meng Yang Kuo-Chang Lu |
author_sort | Chin-Li Shen |
collection | DOAJ |
description | In this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl<sub>2</sub> precursor through a unique double tube chemical vapor deposition (CVD) system, where we could enhance the vapor pressure of the precursor and provide stable Mn vapor with a sealing effect. It is crucial that the method enables the efficient formation of high quality higher manganese silicide nanowires without a change in morphology and aspect ratio during the process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were utilized to characterize the HMS nanowires. High-resolution TEM studies confirm that the HMS nanowires were single crystalline Mn<sub>27</sub>Si<sub>47</sub> nanowires of Nowotny Chimney Ladder crystal structures. Magnetic property measurements show that the Mn<sub>27</sub>Si<sub>47</sub> nanowire arrays were ferromagnetic at room temperature with a Curie temperature of over 300 K, highly depending on the relationship between the direction of the applied electric field and the axial direction of the standing nanowire arrays. Field emission measurements indicate that the 20 μm long nanowires possessed a field enhancement factor of 3307. The excellent physical properties of the HMS nanowires (NWs) make them attractive choices for applications in spintronic devices and field emitters. |
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issn | 2079-4991 |
language | English |
last_indexed | 2024-03-10T16:12:47Z |
publishDate | 2020-09-01 |
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spelling | doaj.art-956526b7acca45ba9e0265a9276ba70c2023-11-20T14:21:00ZengMDPI AGNanomaterials2079-49912020-09-01109188010.3390/nano10091880Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor DepositionChin-Li Shen0Shu-Meng Yang1Kuo-Chang Lu2Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanDepartment of Materials Science and Engineering, National Cheng Kung University, Tainan 701, TaiwanIn this work, we report a novel and efficient silicidation method to synthesize higher manganese silicide (HMS) nanowires with interesting characterization and physical properties. High density silicon nanowire arrays fabricated by chemical etching reacted with MnCl<sub>2</sub> precursor through a unique double tube chemical vapor deposition (CVD) system, where we could enhance the vapor pressure of the precursor and provide stable Mn vapor with a sealing effect. It is crucial that the method enables the efficient formation of high quality higher manganese silicide nanowires without a change in morphology and aspect ratio during the process. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were utilized to characterize the HMS nanowires. High-resolution TEM studies confirm that the HMS nanowires were single crystalline Mn<sub>27</sub>Si<sub>47</sub> nanowires of Nowotny Chimney Ladder crystal structures. Magnetic property measurements show that the Mn<sub>27</sub>Si<sub>47</sub> nanowire arrays were ferromagnetic at room temperature with a Curie temperature of over 300 K, highly depending on the relationship between the direction of the applied electric field and the axial direction of the standing nanowire arrays. Field emission measurements indicate that the 20 μm long nanowires possessed a field enhancement factor of 3307. The excellent physical properties of the HMS nanowires (NWs) make them attractive choices for applications in spintronic devices and field emitters.https://www.mdpi.com/2079-4991/10/9/1880higher manganese silicidechemical vapor depositionnanowirestransmission electron microscopyferromagnetismfield emission |
spellingShingle | Chin-Li Shen Shu-Meng Yang Kuo-Chang Lu Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition Nanomaterials higher manganese silicide chemical vapor deposition nanowires transmission electron microscopy ferromagnetism field emission |
title | Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition |
title_full | Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition |
title_fullStr | Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition |
title_full_unstemmed | Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition |
title_short | Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition |
title_sort | single crystalline higher manganese silicide nanowire arrays with outstanding physical properties through double tube chemical vapor deposition |
topic | higher manganese silicide chemical vapor deposition nanowires transmission electron microscopy ferromagnetism field emission |
url | https://www.mdpi.com/2079-4991/10/9/1880 |
work_keys_str_mv | AT chinlishen singlecrystallinehighermanganesesilicidenanowirearrayswithoutstandingphysicalpropertiesthroughdoubletubechemicalvapordeposition AT shumengyang singlecrystallinehighermanganesesilicidenanowirearrayswithoutstandingphysicalpropertiesthroughdoubletubechemicalvapordeposition AT kuochanglu singlecrystallinehighermanganesesilicidenanowirearrayswithoutstandingphysicalpropertiesthroughdoubletubechemicalvapordeposition |