Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications
Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or polymer film using water‐processable charge‐trap...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2024-04-01
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| Series: | Advanced Intelligent Systems |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aisy.202300651 |
| _version_ | 1797197614766096384 |
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| author | Taehoon Kim Woongki Lee Soyeon Kim Dong Chan Lim Youngkyoo Kim |
| author_facet | Taehoon Kim Woongki Lee Soyeon Kim Dong Chan Lim Youngkyoo Kim |
| author_sort | Taehoon Kim |
| collection | DOAJ |
| description | Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or polymer film using water‐processable charge‐trapping gate‐insulating layers that are prepared by reacting ethylenediamine (EDA) and poly(2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid) (PAMPSA). OSTR‐A is designed to function as a basic artificial synapse by gate pulse stimulation only, while OSTR‐B has additional near‐infrared (NIR)‐absorbing conjugated polymer layers for further sensing of NIR light upon gate voltage stimulations. The PAMPSA:EDA films are found to contain permanent charge bridges (ion pairs of –SO3− +NH3‐) that play a charge‐trapping role in OSTRs. Both devices with the PAMPSA:EDA layers exhibit clear postsynaptic current (PSC) signals upon gate voltage pulses, leading to long‐term potentiation/depression characteristics. The flexible OSTR‐B devices can sense the NIR light (905 nm) upon gate pulse stimulation and their PSC signals are well maintained even after bending (>5000 times). Artificial neural network simulations disclose that the flexible OSTR‐B devices can stably perform synaptic operations under the NIR light with high accuracy (>90%) even after repeated bending (5000 times), indicative of potential use in artificial neuromorphic skin applications. |
| first_indexed | 2024-04-24T06:46:46Z |
| format | Article |
| id | doaj.art-9565ed8e283d42a1aac2b0a30c6623dd |
| institution | Directory Open Access Journal |
| issn | 2640-4567 |
| language | English |
| last_indexed | 2024-04-24T06:46:46Z |
| publishDate | 2024-04-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Intelligent Systems |
| spelling | doaj.art-9565ed8e283d42a1aac2b0a30c6623dd2024-04-22T18:07:16ZengWileyAdvanced Intelligent Systems2640-45672024-04-0164n/an/a10.1002/aisy.202300651Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin ApplicationsTaehoon Kim0Woongki Lee1Soyeon Kim2Dong Chan Lim3Youngkyoo Kim4Organic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA) Department of Chemical Engineering Kyungpook National University Daegu 41566 Republic of KoreaOrganic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA) Department of Chemical Engineering Kyungpook National University Daegu 41566 Republic of KoreaDepartment of Energy & Electronic Materials Surface Materials Division Korea Institute of Materials Science (KIMS) Changwon 51508 Republic of KoreaDepartment of Energy & Electronic Materials Surface Materials Division Korea Institute of Materials Science (KIMS) Changwon 51508 Republic of KoreaOrganic Nanoelectronics Laboratory and KNU Institute for Nanophotonics Applications (KINPA) Department of Chemical Engineering Kyungpook National University Daegu 41566 Republic of KoreaNeuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, are fabricated on either glass or polymer film using water‐processable charge‐trapping gate‐insulating layers that are prepared by reacting ethylenediamine (EDA) and poly(2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid) (PAMPSA). OSTR‐A is designed to function as a basic artificial synapse by gate pulse stimulation only, while OSTR‐B has additional near‐infrared (NIR)‐absorbing conjugated polymer layers for further sensing of NIR light upon gate voltage stimulations. The PAMPSA:EDA films are found to contain permanent charge bridges (ion pairs of –SO3− +NH3‐) that play a charge‐trapping role in OSTRs. Both devices with the PAMPSA:EDA layers exhibit clear postsynaptic current (PSC) signals upon gate voltage pulses, leading to long‐term potentiation/depression characteristics. The flexible OSTR‐B devices can sense the NIR light (905 nm) upon gate pulse stimulation and their PSC signals are well maintained even after bending (>5000 times). Artificial neural network simulations disclose that the flexible OSTR‐B devices can stably perform synaptic operations under the NIR light with high accuracy (>90%) even after repeated bending (5000 times), indicative of potential use in artificial neuromorphic skin applications.https://doi.org/10.1002/aisy.202300651artificial neural networkscharge trappingflexible organic synaptic transistorsneuromorphicwater processable |
| spellingShingle | Taehoon Kim Woongki Lee Soyeon Kim Dong Chan Lim Youngkyoo Kim Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications Advanced Intelligent Systems artificial neural networks charge trapping flexible organic synaptic transistors neuromorphic water processable |
| title | Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications |
| title_full | Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications |
| title_fullStr | Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications |
| title_full_unstemmed | Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications |
| title_short | Near‐Infrared‐Sensing Flexible Organic Synaptic Transistors with Water‐Processable Charge‐Trapping Polymers for Potential Neuromorphic Computing/Skin Applications |
| title_sort | near infrared sensing flexible organic synaptic transistors with water processable charge trapping polymers for potential neuromorphic computing skin applications |
| topic | artificial neural networks charge trapping flexible organic synaptic transistors neuromorphic water processable |
| url | https://doi.org/10.1002/aisy.202300651 |
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