Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation

After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on...

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Main Authors: Hongwei Chen, Sheng Ai, Ziling Nie, Fengrui Cui, Pengfei Yuan
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10045662/
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author Hongwei Chen
Sheng Ai
Ziling Nie
Fengrui Cui
Pengfei Yuan
author_facet Hongwei Chen
Sheng Ai
Ziling Nie
Fengrui Cui
Pengfei Yuan
author_sort Hongwei Chen
collection DOAJ
description After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation.
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spelling doaj.art-95851c8421f84b138b1222ac033ef9c72023-03-23T23:00:23ZengIEEEIEEE Access2169-35362023-01-0111276312764010.1109/ACCESS.2023.324581710045662Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC CommutationHongwei Chen0Sheng Ai1https://orcid.org/0000-0003-3777-4141Ziling Nie2Fengrui Cui3https://orcid.org/0000-0001-5616-2568Pengfei Yuan4Naval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaAfter active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation.https://ieeexplore.ieee.org/document/10045662/SiC-MOSFETANPCmodulation strategypeak voltage
spellingShingle Hongwei Chen
Sheng Ai
Ziling Nie
Fengrui Cui
Pengfei Yuan
Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
IEEE Access
SiC-MOSFET
ANPC
modulation strategy
peak voltage
title Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
title_full Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
title_fullStr Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
title_full_unstemmed Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
title_short Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
title_sort modulation strategy for suppressing peak voltage spikes of sic mosfets during anpc commutation
topic SiC-MOSFET
ANPC
modulation strategy
peak voltage
url https://ieeexplore.ieee.org/document/10045662/
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