Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation
After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on...
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IEEE
2023-01-01
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Series: | IEEE Access |
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Online Access: | https://ieeexplore.ieee.org/document/10045662/ |
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author | Hongwei Chen Sheng Ai Ziling Nie Fengrui Cui Pengfei Yuan |
author_facet | Hongwei Chen Sheng Ai Ziling Nie Fengrui Cui Pengfei Yuan |
author_sort | Hongwei Chen |
collection | DOAJ |
description | After active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation. |
first_indexed | 2024-04-09T22:01:04Z |
format | Article |
id | doaj.art-95851c8421f84b138b1222ac033ef9c7 |
institution | Directory Open Access Journal |
issn | 2169-3536 |
language | English |
last_indexed | 2024-04-09T22:01:04Z |
publishDate | 2023-01-01 |
publisher | IEEE |
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series | IEEE Access |
spelling | doaj.art-95851c8421f84b138b1222ac033ef9c72023-03-23T23:00:23ZengIEEEIEEE Access2169-35362023-01-0111276312764010.1109/ACCESS.2023.324581710045662Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC CommutationHongwei Chen0Sheng Ai1https://orcid.org/0000-0003-3777-4141Ziling Nie2Fengrui Cui3https://orcid.org/0000-0001-5616-2568Pengfei Yuan4Naval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaNaval University of Engineering, Hubei, Wuhan, ChinaAfter active neutral point clamped(ANPC) adopts SiC-MOSFETs, SiC-MOSFETs are easily damaged due to the excessive peak voltage. This paper establishes a single-phase parasitic inductance model of ANPC based on the SiC-MOSFET half-bridge modules. Then, based on this model, the cause of peak voltage on SiC-MOSFETs during ANPC commutation is analyzed. Finally, a short-loop commutation modulation strategy is proposed under the full working conditions of ANPC. The modulation strategy considers the influence of modulation carriers selection and dead time on ANPC commutation and optimizes the ANPC commutation loop to suppress the overvoltage on SiC-MOSFETs during ANPC commutation.https://ieeexplore.ieee.org/document/10045662/SiC-MOSFETANPCmodulation strategypeak voltage |
spellingShingle | Hongwei Chen Sheng Ai Ziling Nie Fengrui Cui Pengfei Yuan Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation IEEE Access SiC-MOSFET ANPC modulation strategy peak voltage |
title | Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation |
title_full | Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation |
title_fullStr | Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation |
title_full_unstemmed | Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation |
title_short | Modulation Strategy for Suppressing Peak Voltage Spikes of SiC-MOSFETs During ANPC Commutation |
title_sort | modulation strategy for suppressing peak voltage spikes of sic mosfets during anpc commutation |
topic | SiC-MOSFET ANPC modulation strategy peak voltage |
url | https://ieeexplore.ieee.org/document/10045662/ |
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