Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors
Abstract Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2021-05-01
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| Series: | Light: Science & Applications |
| Online Access: | https://doi.org/10.1038/s41377-021-00553-2 |
| _version_ | 1798030467118661632 |
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| author | Jun Yin Lian Liu Yashu Zang Anni Ying Wenjie Hui Shusen Jiang Chunquan Zhang Tzuyi Yang Yu-Lun Chueh Jing Li Junyong Kang |
| author_facet | Jun Yin Lian Liu Yashu Zang Anni Ying Wenjie Hui Shusen Jiang Chunquan Zhang Tzuyi Yang Yu-Lun Chueh Jing Li Junyong Kang |
| author_sort | Jun Yin |
| collection | DOAJ |
| description | Abstract Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration. |
| first_indexed | 2024-04-11T19:41:55Z |
| format | Article |
| id | doaj.art-95934a3b9c0a4a43af0a02e1b48dd13b |
| institution | Directory Open Access Journal |
| issn | 2047-7538 |
| language | English |
| last_indexed | 2024-04-11T19:41:55Z |
| publishDate | 2021-05-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Light: Science & Applications |
| spelling | doaj.art-95934a3b9c0a4a43af0a02e1b48dd13b2022-12-22T04:06:42ZengNature Publishing GroupLight: Science & Applications2047-75382021-05-0110111010.1038/s41377-021-00553-2Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectorsJun Yin0Lian Liu1Yashu Zang2Anni Ying3Wenjie Hui4Shusen Jiang5Chunquan Zhang6Tzuyi Yang7Yu-Lun Chueh8Jing Li9Junyong Kang10Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversitySan’an Optoelectronics Co., Ltd.Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityDepartment of Materials Science and Engineering, Tsing Hua UniversityDepartment of Materials Science and Engineering, Tsing Hua UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityCollaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology/ Department of Physics, Xiamen UniversityAbstract Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.https://doi.org/10.1038/s41377-021-00553-2 |
| spellingShingle | Jun Yin Lian Liu Yashu Zang Anni Ying Wenjie Hui Shusen Jiang Chunquan Zhang Tzuyi Yang Yu-Lun Chueh Jing Li Junyong Kang Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors Light: Science & Applications |
| title | Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors |
| title_full | Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors |
| title_fullStr | Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors |
| title_full_unstemmed | Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors |
| title_short | Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors |
| title_sort | engineered tunneling layer with enhanced impact ionization for detection improvement in graphene silicon heterojunction photodetectors |
| url | https://doi.org/10.1038/s41377-021-00553-2 |
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