Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer
All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, w...
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Tsinghua University Press
2023-09-01
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Online Access: | https://www.sciopen.com/article/10.26599/NRE.2023.9120073 |
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author | Yanbo Shang Pu Wang Lingbo Jia Xingcheng Li Weitao Lian Peisen Qian Muqing Chen Tao Chen Yalin Lu Shangfeng Yang |
author_facet | Yanbo Shang Pu Wang Lingbo Jia Xingcheng Li Weitao Lian Peisen Qian Muqing Chen Tao Chen Yalin Lu Shangfeng Yang |
author_sort | Yanbo Shang |
collection | DOAJ |
description | All-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device. |
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spelling | doaj.art-95da8679ae7948c9922ba3825d32827b2023-06-21T06:25:21ZengTsinghua University PressNano Research Energy2791-00912790-81192023-09-0123e9120073e912007310.26599/NRE.2023.9120073Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayerYanbo Shang0Pu Wang1Lingbo Jia2Xingcheng Li3Weitao Lian4Peisen Qian5Muqing Chen6Tao Chen7Yalin Lu8Shangfeng Yang9CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaSchool of Environment and Civil Engineering, Dongguan University of Technology, Dongguan 523808, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, ChinaAll-inorganic CsPbI3–xBrx perovskite solar cells (PSCs) are advantageous in terms of high thermal stability, while its efficiency lags behind those of organic-inorganic hybrid perovskite counterparts. Defect passivations have been extensively applied for enhancing efficiency of all-inorganic PSCs, which are mainly based on univocal defect passivation of perovskite layer. Herein, we incorporated a bis-dimethylamino-functionalized fullerene derivative (abbreviated as PCBDMAM) as an interlayer between ZnO electron transport layer (ETL) and all-inorganic CsPbI2.25Br0.75 perovskite layer, accomplishing synchronous defect passivations of both layers and consequently dramatic enhancements of efficiency and thermal stability of PSC devices. Upon spin-coating PCBDMAM onto ZnO ETL, the surface defects of ZnO especially oxygen vacancies can be effectively passivated due to the formation of Zn−N ionic bonds. In addition, PCBDMAM incorporation affords effective passivation of PbI and IPb antisite defects within the atop perovskite layer as well via coordination bonding with Pb2+. As a result, the regular-structure planar CsPbI2.25Br0.75 PSC device delivers a champion power conversion efficiency (PCE) of 17.04%, which surpasses that of the control device (15.44%). Moreover, the PCBDMAM-incorporated PSC device maintains ~ 80% of its initial PCE after 600 h heating at 85 °C hot plate in N2 atmosphere, whereas PCE of the control device degrades rapidly to ~ 62% after 460 h heating under identical conditions. Hence, PCBDMAM incorporation benefited dramatic improvement of the thermal stability of PSC device.https://www.sciopen.com/article/10.26599/NRE.2023.9120073all-inorganic perovskite solar cellsfullerene derivativeelectron transport layerthermal stabilitydefect passivation |
spellingShingle | Yanbo Shang Pu Wang Lingbo Jia Xingcheng Li Weitao Lian Peisen Qian Muqing Chen Tao Chen Yalin Lu Shangfeng Yang Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer Nano Research Energy all-inorganic perovskite solar cells fullerene derivative electron transport layer thermal stability defect passivation |
title | Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer |
title_full | Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer |
title_fullStr | Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer |
title_full_unstemmed | Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer |
title_short | Synchronous defect passivation of all-inorganic perovskite solar cells enabled by fullerene interlayer |
title_sort | synchronous defect passivation of all inorganic perovskite solar cells enabled by fullerene interlayer |
topic | all-inorganic perovskite solar cells fullerene derivative electron transport layer thermal stability defect passivation |
url | https://www.sciopen.com/article/10.26599/NRE.2023.9120073 |
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