Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2012-08-01
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| Series: | Materials Research |
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| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008 |
| _version_ | 1811331599646588928 |
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| author | Emilson Ribeiro Viana Geraldo Mathias Ribeiro Alfredo Gontijo de Oliveira Marcelos Lima Peres Rero Marques Rubinger Carla Patrícia Lacerda Rubinger |
| author_facet | Emilson Ribeiro Viana Geraldo Mathias Ribeiro Alfredo Gontijo de Oliveira Marcelos Lima Peres Rero Marques Rubinger Carla Patrícia Lacerda Rubinger |
| author_sort | Emilson Ribeiro Viana |
| collection | DOAJ |
| description | Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T > 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature. |
| first_indexed | 2024-04-13T16:23:09Z |
| format | Article |
| id | doaj.art-95ec586887394a4dadfd02154d243d50 |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-04-13T16:23:09Z |
| publishDate | 2012-08-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-95ec586887394a4dadfd02154d243d502022-12-22T02:39:51ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392012-08-01154530535Antilocalization effect on photo-generated carriers in semi-insulating GaAs sampleEmilson Ribeiro VianaGeraldo Mathias RibeiroAlfredo Gontijo de OliveiraMarcelos Lima PeresRero Marques RubingerCarla Patrícia Lacerda RubingerMagnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T > 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008semi-insulating GaAsdeep-level defectsantilocalization |
| spellingShingle | Emilson Ribeiro Viana Geraldo Mathias Ribeiro Alfredo Gontijo de Oliveira Marcelos Lima Peres Rero Marques Rubinger Carla Patrícia Lacerda Rubinger Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample Materials Research semi-insulating GaAs deep-level defects antilocalization |
| title | Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample |
| title_full | Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample |
| title_fullStr | Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample |
| title_full_unstemmed | Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample |
| title_short | Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample |
| title_sort | antilocalization effect on photo generated carriers in semi insulating gaas sample |
| topic | semi-insulating GaAs deep-level defects antilocalization |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008 |
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