Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220...
Main Authors: | Emilson Ribeiro Viana, Geraldo Mathias Ribeiro, Alfredo Gontijo de Oliveira, Marcelos Lima Peres, Rero Marques Rubinger, Carla Patrícia Lacerda Rubinger |
---|---|
Format: | Article |
Language: | English |
Published: |
Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2012-08-01
|
Series: | Materials Research |
Subjects: | |
Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392012000400008 |
Similar Items
-
Weak Antilocalization in Polycrystalline SnTe Films Deposited by Magnetron Sputtering
by: Xiaodong Li, et al.
Published: (2022-05-01) -
Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays
by: Michal Krupinski, et al.
Published: (2020-07-01) -
Crossover from weak-antilocalization transport to quantum magnetoresistance of Dirac states in quenched Fe0.01Bi2Te3 single crystals with large magnetoresistance and high Hall mobility
by: Li-Min Wang, et al.
Published: (2020-01-01) -
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon
by: Buqing Xu, et al.
Published: (2022-08-01) -
Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique
by: J. Jesús Cruz Bueno, et al.
Published: (2019-01-01)