Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy
Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) is a sophisticated technique to synthesize high-temperature superconductor (HTS) materials. ALL-MBE produces single-crystal HTS films with atomically smooth surfaces and interfaces, as well as precise multilayer heterostructures engineered down...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2022-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0087223 |
| _version_ | 1811325546039083008 |
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| author | Xiaotao Xu Xi He Xiaoyan Shi Ivan Božović |
| author_facet | Xiaotao Xu Xi He Xiaoyan Shi Ivan Božović |
| author_sort | Xiaotao Xu |
| collection | DOAJ |
| description | Atomic layer-by-layer molecular beam epitaxy (ALL-MBE) is a sophisticated technique to synthesize high-temperature superconductor (HTS) materials. ALL-MBE produces single-crystal HTS films with atomically smooth surfaces and interfaces, as well as precise multilayer heterostructures engineered down to a single atomic layer level. This enables the fabrication of tunnel junctions, nanowires, nanorings, and other HTS devices of interest. Our group has focused on ALL-MBE synthesis and materials science of La2−xSrxCuO4 (LSCO), a representative HTS cuprate. In the past two decades, we have synthesized over three thousand LSCO thin films and characterized them by a range of analytical techniques. Here, we present in full detail a systematic process for the synthesis and engineering of atomically perfect LSCO films. The procedure includes the preparation of substrates, calibration of the elemental sources, the recipe for ALL growth of LSCO films without any secondary-phase precipitates, post-growth annealing of the films, and ex situ film characterization. This report should aid replication and dissemination of this technique of synthesizing single-crystal LSCO films for basic research as well as for HTS electronic applications. |
| first_indexed | 2024-04-13T14:35:06Z |
| format | Article |
| id | doaj.art-95fbe7f1a6554b8aac55736e22f0bf3a |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T14:35:06Z |
| publishDate | 2022-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-95fbe7f1a6554b8aac55736e22f0bf3a2022-12-22T02:43:03ZengAIP Publishing LLCAPL Materials2166-532X2022-06-01106061103061103-1010.1063/5.0087223Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxyXiaotao Xu0Xi He1Xiaoyan Shi2Ivan Božović3Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USADepartment of Physics, The University of Texas at Dallas, Richardson, Texas 75080-3021, USACondensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USAAtomic layer-by-layer molecular beam epitaxy (ALL-MBE) is a sophisticated technique to synthesize high-temperature superconductor (HTS) materials. ALL-MBE produces single-crystal HTS films with atomically smooth surfaces and interfaces, as well as precise multilayer heterostructures engineered down to a single atomic layer level. This enables the fabrication of tunnel junctions, nanowires, nanorings, and other HTS devices of interest. Our group has focused on ALL-MBE synthesis and materials science of La2−xSrxCuO4 (LSCO), a representative HTS cuprate. In the past two decades, we have synthesized over three thousand LSCO thin films and characterized them by a range of analytical techniques. Here, we present in full detail a systematic process for the synthesis and engineering of atomically perfect LSCO films. The procedure includes the preparation of substrates, calibration of the elemental sources, the recipe for ALL growth of LSCO films without any secondary-phase precipitates, post-growth annealing of the films, and ex situ film characterization. This report should aid replication and dissemination of this technique of synthesizing single-crystal LSCO films for basic research as well as for HTS electronic applications.http://dx.doi.org/10.1063/5.0087223 |
| spellingShingle | Xiaotao Xu Xi He Xiaoyan Shi Ivan Božović Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy APL Materials |
| title | Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy |
| title_full | Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy |
| title_fullStr | Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy |
| title_full_unstemmed | Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy |
| title_short | Synthesis of La2−xSrxCuO4 films via atomic layer-by-layer molecular beam epitaxy |
| title_sort | synthesis of la2 xsrxcuo4 films via atomic layer by layer molecular beam epitaxy |
| url | http://dx.doi.org/10.1063/5.0087223 |
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