Sapphire irradiation by phosphorus as an approach to improve its optical properties
Ion beam-induced luminescence (IBIL) is a versatile technique used to elucidate the chemical bond’s nature and analyze the defects study and impurities present in the material. In this study, IBIL spectra of phosphorus-irradiated sapphire has been analyzed under 2 MeV proton beam as a function of io...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2022-04-01
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| Series: | Open Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/phys-2022-0022 |
| _version_ | 1811203017576284160 |
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| author | Bibi Baseerat Ahmad Ishaq Hussain Javaid Alrowaili Ziyad Awadh Zhao Ting-kai ur Rahman Waseem Aisidia Samson O. |
| author_facet | Bibi Baseerat Ahmad Ishaq Hussain Javaid Alrowaili Ziyad Awadh Zhao Ting-kai ur Rahman Waseem Aisidia Samson O. |
| author_sort | Bibi Baseerat |
| collection | DOAJ |
| description | Ion beam-induced luminescence (IBIL) is a versatile technique used to elucidate the chemical bond’s nature and analyze the defects study and impurities present in the material. In this study, IBIL spectra of phosphorus-irradiated sapphire has been analyzed under 2 MeV proton beam as a function of ion dose ranging from 1 × 1014 to 10 × 1014 ions/cm2 at room temperature in the wavelength range of 200–1,000 nm. The IBIL spectrum shows three kinds of luminescence features. The bands centered at 419 nm as F center and 330 nm as F+ center are associated with oxygen vacancies. The third kind of luminescence feature located at 704 nm is related to chromium impurities present in the crystal. The luminescence spectrum of the phosphorus-irradiated sapphire has been correlated with the spectrum obtained from pristine sapphire. The finding indicates that the intensity of defects due to phosphorus irradiation is reduced. As the proton ion fluence increases, the F and F+ center luminescence intensity eventually varies; it turns out that in phosphorus-irradiated sapphire, single crystal defects were reduced and the optical quality was improved. |
| first_indexed | 2024-04-12T02:47:47Z |
| format | Article |
| id | doaj.art-962121fae3c84594aa7c3034b7e5c1c8 |
| institution | Directory Open Access Journal |
| issn | 2391-5471 |
| language | English |
| last_indexed | 2024-04-12T02:47:47Z |
| publishDate | 2022-04-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Open Physics |
| spelling | doaj.art-962121fae3c84594aa7c3034b7e5c1c82022-12-22T03:51:06ZengDe GruyterOpen Physics2391-54712022-04-0120120220710.1515/phys-2022-0022Sapphire irradiation by phosphorus as an approach to improve its optical propertiesBibi Baseerat0Ahmad Ishaq1Hussain Javaid2Alrowaili Ziyad Awadh3Zhao Ting-kai4ur Rahman Waseem5Aisidia Samson O.6School of Physics & School of Microelectronics, Dalian University of Technology, Dalian 116024, ChinaNational Centre for Physics, Quaid-i-Azam University Campus, Islamabad 44000, PakistanNational Centre for Physics, Quaid-i-Azam University Campus, Islamabad 44000, PakistanDepartment of Physics, College of Science, Jouf University, Sakaka, Saudi ArabiaNPU-NCP Joint International Research Center on Advanced Nanomaterials and Defects Engineering, Northwestern Polytechnical University, Xi’an 710072, ChinaSchool of Mechanical Engineering, Dalian University of Technology, Dalian 116024, ChinaNational Centre for Physics, Quaid-i-Azam University Campus, Islamabad 44000, PakistanIon beam-induced luminescence (IBIL) is a versatile technique used to elucidate the chemical bond’s nature and analyze the defects study and impurities present in the material. In this study, IBIL spectra of phosphorus-irradiated sapphire has been analyzed under 2 MeV proton beam as a function of ion dose ranging from 1 × 1014 to 10 × 1014 ions/cm2 at room temperature in the wavelength range of 200–1,000 nm. The IBIL spectrum shows three kinds of luminescence features. The bands centered at 419 nm as F center and 330 nm as F+ center are associated with oxygen vacancies. The third kind of luminescence feature located at 704 nm is related to chromium impurities present in the crystal. The luminescence spectrum of the phosphorus-irradiated sapphire has been correlated with the spectrum obtained from pristine sapphire. The finding indicates that the intensity of defects due to phosphorus irradiation is reduced. As the proton ion fluence increases, the F and F+ center luminescence intensity eventually varies; it turns out that in phosphorus-irradiated sapphire, single crystal defects were reduced and the optical quality was improved.https://doi.org/10.1515/phys-2022-0022single crystal sapphireion beam-induced luminescenceproton beamdefects ratio |
| spellingShingle | Bibi Baseerat Ahmad Ishaq Hussain Javaid Alrowaili Ziyad Awadh Zhao Ting-kai ur Rahman Waseem Aisidia Samson O. Sapphire irradiation by phosphorus as an approach to improve its optical properties Open Physics single crystal sapphire ion beam-induced luminescence proton beam defects ratio |
| title | Sapphire irradiation by phosphorus as an approach to improve its optical properties |
| title_full | Sapphire irradiation by phosphorus as an approach to improve its optical properties |
| title_fullStr | Sapphire irradiation by phosphorus as an approach to improve its optical properties |
| title_full_unstemmed | Sapphire irradiation by phosphorus as an approach to improve its optical properties |
| title_short | Sapphire irradiation by phosphorus as an approach to improve its optical properties |
| title_sort | sapphire irradiation by phosphorus as an approach to improve its optical properties |
| topic | single crystal sapphire ion beam-induced luminescence proton beam defects ratio |
| url | https://doi.org/10.1515/phys-2022-0022 |
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