Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

Modeling, Simulation Methods and Characterization of Photon Detection Probability in CMOS-SPAD

Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology are potential candidates for future “Light Detection and Ranging” (Lidar) space systems. Among the SPAD performance parameters, the Photon Detection Probability (PDP) is one of the principal parameters...

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Bibliographic Details
Main Authors:	Aymeric Panglosse, Philippe Martin-Gonthier, Olivier Marcelot, Cédric Virmontois, Olivier Saint-Pé, Pierre Magnan
Format:	Article
Language:	English
Published:	MDPI AG 2021-08-01
Series:	Sensors
Subjects:	single photon avalanche diode (SPAD) complementary metal-oxide semiconductor (CMOS) modeling and simulations photon detection probability (PDP) quantum efficiency (QE) technology computer-aided design (TCAD)
Online Access:	https://www.mdpi.com/1424-8220/21/17/5860

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