Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-10-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/11/2044 |
| _version_ | 1797458388113686528 |
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| author | Xiazhi Zou Jiayi Yang Qifeng Qiao Xinbo Zou Jiaxiang Chen Yang Shi Kailin Ren |
| author_facet | Xiazhi Zou Jiayi Yang Qifeng Qiao Xinbo Zou Jiaxiang Chen Yang Shi Kailin Ren |
| author_sort | Xiazhi Zou |
| collection | DOAJ |
| description | Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs. |
| first_indexed | 2024-03-09T16:36:24Z |
| format | Article |
| id | doaj.art-965490ad4d4b460b92f261f8602f06bf |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T16:36:24Z |
| publishDate | 2023-10-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-965490ad4d4b460b92f261f8602f06bf2023-11-24T14:56:21ZengMDPI AGMicromachines2072-666X2023-10-011411204410.3390/mi14112044Trap Characterization Techniques for GaN-Based HEMTs: A Critical ReviewXiazhi Zou0Jiayi Yang1Qifeng Qiao2Xinbo Zou3Jiaxiang Chen4Yang Shi5Kailin Ren6School of Microelectronics, Shanghai University, Shanghai 200444, ChinaSchool of Microelectronics, Shanghai University, Shanghai 200444, ChinaShanghai Industrial μTechnology Research Institute, Shanghai 201800, ChinaSchool of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaSchool of Information Science and Technology, ShanghaiTech University, Shanghai 201210, ChinaSchool of Microelectronics, Shanghai University, Shanghai 200444, ChinaSchool of Microelectronics, Shanghai University, Shanghai 200444, ChinaGallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has been constrained by stability and reliability issues related to traps. In this article, the locations and energy levels of traps in GaN HEMTs are summarized. Moreover, the characterization techniques for bulk traps and interface traps, whose characteristics and scopes are included as well, are reviewed and highlighted. Finally, the challenges in trap characterization techniques for GaN-based HEMTs are discussed to provide insights into the reliability assessment of GaN-based HEMTs.https://www.mdpi.com/2072-666X/14/11/2044GaN HEMTtrapcharacterization methodsDLTS |
| spellingShingle | Xiazhi Zou Jiayi Yang Qifeng Qiao Xinbo Zou Jiaxiang Chen Yang Shi Kailin Ren Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review Micromachines GaN HEMT trap characterization methods DLTS |
| title | Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review |
| title_full | Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review |
| title_fullStr | Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review |
| title_full_unstemmed | Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review |
| title_short | Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review |
| title_sort | trap characterization techniques for gan based hemts a critical review |
| topic | GaN HEMT trap characterization methods DLTS |
| url | https://www.mdpi.com/2072-666X/14/11/2044 |
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