Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. However, the development of GaN HEMTs has...

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Bibliographic Details
Main Authors: Xiazhi Zou, Jiayi Yang, Qifeng Qiao, Xinbo Zou, Jiaxiang Chen, Yang Shi, Kailin Ren
Format: Article
Language:English
Published: MDPI AG 2023-10-01
Series:Micromachines
Subjects:
GaN HEMT
trap
characterization methods
DLTS
Online Access:https://www.mdpi.com/2072-666X/14/11/2044

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