Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD
An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial quality has been confirmed through X-ray diffraction, while some corresponding micro-structural propagation defects have been characteri...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-01-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/2/203 |