Study on the preparation of silicon carbide from carbon in waste cathodes
Silicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge. Silicon carbide was prepared via carbothermal reduction using silicon dioxide and purified waste ca...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2022-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac93eb |
| _version_ | 1797746280870445056 |
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| author | Hui Liao Longjiang Li Song Mao |
| author_facet | Hui Liao Longjiang Li Song Mao |
| author_sort | Hui Liao |
| collection | DOAJ |
| description | Silicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge. Silicon carbide was prepared via carbothermal reduction using silicon dioxide and purified waste cathodes as the carbon source. The optimum conditions for preparing silicon carbide using waste cathodes are temperature = 1550 °C, molar ratio of carbon to silicon = 3:1 and holding time = 3 h. The microstructure of the prepared silicon carbide was investigated using x-ray diffraction (XRD), infrared spectroscopy and scanning electron microscopy (SEM). The XRD results of the prepared silicon carbide showed that β -SiC was the main phase of the prepared silicon carbide. The SEM results showed that the prepared silicon carbide was fibrous. The growth mechanism of silicon carbide was proposed using the thermodynamic calculations of chemical reactions. |
| first_indexed | 2024-03-12T15:34:34Z |
| format | Article |
| id | doaj.art-9683f5789b72455db24d965cf89bf391 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:34:34Z |
| publishDate | 2022-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-9683f5789b72455db24d965cf89bf3912023-08-09T16:17:37ZengIOP PublishingMaterials Research Express2053-15912022-01-019909560310.1088/2053-1591/ac93ebStudy on the preparation of silicon carbide from carbon in waste cathodesHui Liao0Longjiang Li1https://orcid.org/0000-0002-9222-986XSong Mao2College of Mining, Guizhou University , Guiyang 550025, People’s Republic of China; Guizhou Key Laboratory of Comprehensive Utilization of Non-metallic Mineral Resources, Guiyang 550025, People’s Republic of China; National & Local Joint Laboratory of Engineering for Effective Utilization of Regional Mineral Resources from Karst Areas, Guizhou, Guiyang 550025, People’s Republic of ChinaCollege of Mining, Guizhou University , Guiyang 550025, People’s Republic of China; Guizhou Key Laboratory of Comprehensive Utilization of Non-metallic Mineral Resources, Guiyang 550025, People’s Republic of China; National & Local Joint Laboratory of Engineering for Effective Utilization of Regional Mineral Resources from Karst Areas, Guizhou, Guiyang 550025, People’s Republic of ChinaCollege of Mining, Guizhou University , Guiyang 550025, People’s Republic of China; Guizhou Key Laboratory of Comprehensive Utilization of Non-metallic Mineral Resources, Guiyang 550025, People’s Republic of China; National & Local Joint Laboratory of Engineering for Effective Utilization of Regional Mineral Resources from Karst Areas, Guizhou, Guiyang 550025, People’s Republic of ChinaSilicon carbide as the core material for third-generation semiconductors plays an important role in many fields; however, its large-scale applications as well as low-cost synthesis remain a challenge. Silicon carbide was prepared via carbothermal reduction using silicon dioxide and purified waste cathodes as the carbon source. The optimum conditions for preparing silicon carbide using waste cathodes are temperature = 1550 °C, molar ratio of carbon to silicon = 3:1 and holding time = 3 h. The microstructure of the prepared silicon carbide was investigated using x-ray diffraction (XRD), infrared spectroscopy and scanning electron microscopy (SEM). The XRD results of the prepared silicon carbide showed that β -SiC was the main phase of the prepared silicon carbide. The SEM results showed that the prepared silicon carbide was fibrous. The growth mechanism of silicon carbide was proposed using the thermodynamic calculations of chemical reactions.https://doi.org/10.1088/2053-1591/ac93ebwaste cathodesilicon carbidecarbon thermal reductiongrowth mechanism |
| spellingShingle | Hui Liao Longjiang Li Song Mao Study on the preparation of silicon carbide from carbon in waste cathodes Materials Research Express waste cathode silicon carbide carbon thermal reduction growth mechanism |
| title | Study on the preparation of silicon carbide from carbon in waste cathodes |
| title_full | Study on the preparation of silicon carbide from carbon in waste cathodes |
| title_fullStr | Study on the preparation of silicon carbide from carbon in waste cathodes |
| title_full_unstemmed | Study on the preparation of silicon carbide from carbon in waste cathodes |
| title_short | Study on the preparation of silicon carbide from carbon in waste cathodes |
| title_sort | study on the preparation of silicon carbide from carbon in waste cathodes |
| topic | waste cathode silicon carbide carbon thermal reduction growth mechanism |
| url | https://doi.org/10.1088/2053-1591/ac93eb |
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