Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review
In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optica...
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10182322/ |
| _version_ | 1797742978867920896 |
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| author | Avi Karsenty |
| author_facet | Avi Karsenty |
| author_sort | Avi Karsenty |
| collection | DOAJ |
| description | In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element's indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of recent innovative design geometries has enabled the development of a series of silicon nanophotonics and nanoelectronics devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this comprehensive review is a new, methodical approach showcasing examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications. After presenting stand-alone devices, we discuss concerns, considerations, trends and forecasts regarding their possible integration into nanophotonics modules and platforms. |
| first_indexed | 2024-03-12T14:47:59Z |
| format | Article |
| id | doaj.art-96890ade10a247aca58f2ca3cd52cfa9 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-03-12T14:47:59Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-96890ade10a247aca58f2ca3cd52cfa92023-08-15T23:00:04ZengIEEEIEEE Photonics Journal1943-06552023-01-0115411910.1109/JPHOT.2023.329507710182322Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: ReviewAvi Karsenty0https://orcid.org/0000-0003-0518-9028Nanotechnology Center for Research and Education and the Applied Physics/Electro-Optics Engineering Department, Lev Academic Center – Jerusalem College of Technology, Jerusalem, IsraelIn order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and GAAFET downsizing techniques have started to near the physical limits of available materials. Although on-chip optical communication presents a promising direction for circumventing the scaling bottleneck, silicon-based solutions are constrained by several factors, such as the element's indirect energy band gap, limited absorption spectrum, native oxide, and more. However, the employment of recent innovative design geometries has enabled the development of a series of silicon nanophotonics and nanoelectronics devices that both overcome these limitations as well as improve on existing physical phenomena. Presented in this comprehensive review is a new, methodical approach showcasing examples of these Si nano-devices, which are part of a larger family of components being developed for optical communication and advanced sensing applications. After presenting stand-alone devices, we discuss concerns, considerations, trends and forecasts regarding their possible integration into nanophotonics modules and platforms.https://ieeexplore.ieee.org/document/10182322/Comsol Multi-Physics simulationsgeometry workaroundindirect band gap overcominginter-sub-band transitions (ISBT)nanophotonics and nanoelectronics silicon devicesphotonic integrated circuits (PIC) |
| spellingShingle | Avi Karsenty Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review IEEE Photonics Journal Comsol Multi-Physics simulations geometry workaround indirect band gap overcoming inter-sub-band transitions (ISBT) nanophotonics and nanoelectronics silicon devices photonic integrated circuits (PIC) |
| title | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review |
| title_full | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review |
| title_fullStr | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review |
| title_full_unstemmed | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review |
| title_short | Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review |
| title_sort | overcoming silicon limitations in nanophotonic devices by geometrical innovation review |
| topic | Comsol Multi-Physics simulations geometry workaround indirect band gap overcoming inter-sub-band transitions (ISBT) nanophotonics and nanoelectronics silicon devices photonic integrated circuits (PIC) |
| url | https://ieeexplore.ieee.org/document/10182322/ |
| work_keys_str_mv | AT avikarsenty overcomingsiliconlimitationsinnanophotonicdevicesbygeometricalinnovationreview |