Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM
Abstract The Bi content in GaAs/GaAs1 − x Bi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanni...
Main Authors: | N. Baladés, D. L. Sales, M. Herrera, C. H. Tan, Y. Liu, R. D. Richards, S. I. Molina |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2018-04-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1186/s11671-018-2530-5 |
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