Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling
The role of inhibitor behavior in abnormal growth of Goss grains during secondary recrystallization was studied in combination with experimental observation and phase-field model simulation in grain-oriented silicon steel. The frequency advantages of both HE (high energy) and CSL (coincidence site l...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-05-01
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| Series: | Journal of Materials Research and Technology |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785423006439 |
| _version_ | 1797798812529459200 |
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| author | Feng Fang Shuaifa Dai Yuanxiang Zhang Yang Wang Guo Yuan Mingtao Wang Guodong Wang |
| author_facet | Feng Fang Shuaifa Dai Yuanxiang Zhang Yang Wang Guo Yuan Mingtao Wang Guodong Wang |
| author_sort | Feng Fang |
| collection | DOAJ |
| description | The role of inhibitor behavior in abnormal growth of Goss grains during secondary recrystallization was studied in combination with experimental observation and phase-field model simulation in grain-oriented silicon steel. The frequency advantages of both HE (high energy) and CSL (coincidence site lattice) grain boundaries around Goss grains over the matrix were identified, with frequency advantages of ∼15% and ∼2% respectively. The HE grain boundary was supposed to play a more important role in abnormal grain growth over CSL grain boundary in this study. The boundary character distribution was necessary but not sufficient for the abnormal growth of Goss grains. Appropriate inhibitor behavior was a prerequisite for secondary recrystallization. The initial content and stability of inhibitor played a key role in stabilizing the matrix, which guaranteed beneficial fine grains around Goss grains. While if the inhibitor force rapidly declined, matrix grains might grow obviously, resulting in coarsened grain colonies with Cube, {112}<110>, {111}<112>, {411}<148>and {210}<001> orientation, which further hindered the abnormal growth of Goss grains. The candidate Goss grains with different misorientations competed with each other during secondary recrystallization and the exact Goss grain exhibited an obvious growth advantage. Only with an appropriate pinning force and grain boundary character, perfect secondary recrystallization can be achieved. The present findings can provide guidance to understand and precise control of abnormal grain growth phenomenon. |
| first_indexed | 2024-03-13T04:09:32Z |
| format | Article |
| id | doaj.art-96b657f0df7a42a6a4f2188f1a1dcdb2 |
| institution | Directory Open Access Journal |
| issn | 2238-7854 |
| language | English |
| last_indexed | 2024-03-13T04:09:32Z |
| publishDate | 2023-05-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materials Research and Technology |
| spelling | doaj.art-96b657f0df7a42a6a4f2188f1a1dcdb22023-06-21T06:56:11ZengElsevierJournal of Materials Research and Technology2238-78542023-05-012429182934Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modelingFeng Fang0Shuaifa Dai1Yuanxiang Zhang2Yang Wang3Guo Yuan4Mingtao Wang5Guodong Wang6State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, ChinaState Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, ChinaState Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, China; Corresponding author.State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, ChinaState Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, ChinaSchool of Materials Science and Engineering, Northeastern University, Shenyang 110819, China; Corresponding author.State Key Laboratory of Rolling Technology and Automation, Northeastern University, Shenyang 110819, ChinaThe role of inhibitor behavior in abnormal growth of Goss grains during secondary recrystallization was studied in combination with experimental observation and phase-field model simulation in grain-oriented silicon steel. The frequency advantages of both HE (high energy) and CSL (coincidence site lattice) grain boundaries around Goss grains over the matrix were identified, with frequency advantages of ∼15% and ∼2% respectively. The HE grain boundary was supposed to play a more important role in abnormal grain growth over CSL grain boundary in this study. The boundary character distribution was necessary but not sufficient for the abnormal growth of Goss grains. Appropriate inhibitor behavior was a prerequisite for secondary recrystallization. The initial content and stability of inhibitor played a key role in stabilizing the matrix, which guaranteed beneficial fine grains around Goss grains. While if the inhibitor force rapidly declined, matrix grains might grow obviously, resulting in coarsened grain colonies with Cube, {112}<110>, {111}<112>, {411}<148>and {210}<001> orientation, which further hindered the abnormal growth of Goss grains. The candidate Goss grains with different misorientations competed with each other during secondary recrystallization and the exact Goss grain exhibited an obvious growth advantage. Only with an appropriate pinning force and grain boundary character, perfect secondary recrystallization can be achieved. The present findings can provide guidance to understand and precise control of abnormal grain growth phenomenon.http://www.sciencedirect.com/science/article/pii/S2238785423006439InhibitorAbnormal grain growthTexturePhase-field simulationSilicon steel |
| spellingShingle | Feng Fang Shuaifa Dai Yuanxiang Zhang Yang Wang Guo Yuan Mingtao Wang Guodong Wang Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling Journal of Materials Research and Technology Inhibitor Abnormal grain growth Texture Phase-field simulation Silicon steel |
| title | Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling |
| title_full | Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling |
| title_fullStr | Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling |
| title_full_unstemmed | Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling |
| title_short | Role of inhibitor behavior in abnormal growth of Goss grain in grain-oriented silicon steel: experiments and modeling |
| title_sort | role of inhibitor behavior in abnormal growth of goss grain in grain oriented silicon steel experiments and modeling |
| topic | Inhibitor Abnormal grain growth Texture Phase-field simulation Silicon steel |
| url | http://www.sciencedirect.com/science/article/pii/S2238785423006439 |
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