Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
We have investigated ferroelectric-gate field-effect transistors (FeFETs) with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1−x (Hf-Al-O) and Pt/SrBi2Ta2O9/HfO2 gate stacks. The fabricated FeFETs have excellent data retention characteristics: The drain current ratio between the on- and off-states of a FeFET was more...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2010-11-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/3/11/4950/ |