GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET
For higher density of transistors in Integrated Circuit (IC), various scaling technologies have been introduced. In the light of the physical limit in advancing single-gate transistor architecture, the structural transition from planar device architecture toward 3D device architecture (of which the...
| Main Authors: | , , , , , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
IEEE
2022-01-01
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| 丛编: | IEEE Access |
| 主题: | |
| 在线阅读: | https://ieeexplore.ieee.org/document/9982433/ |