Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon
The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study sh...
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| Format: | Article |
| Language: | English |
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University of Zakho
2013-09-01
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| Series: | Science Journal of University of Zakho |
| Subjects: | |
| Online Access: | https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448 |
| _version_ | 1811249320924545024 |
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| author | Ahmed Kh. AL-Kadumi Alwan M. Alwan Ali H. Al-Batat |
| author_facet | Ahmed Kh. AL-Kadumi Alwan M. Alwan Ali H. Al-Batat |
| author_sort | Ahmed Kh. AL-Kadumi |
| collection | DOAJ |
| description | The present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program. |
| first_indexed | 2024-04-12T15:44:27Z |
| format | Article |
| id | doaj.art-96f046ccaf4d453b87eeb3306a1015fe |
| institution | Directory Open Access Journal |
| issn | 2663-628X 2663-6298 |
| language | English |
| last_indexed | 2024-04-12T15:44:27Z |
| publishDate | 2013-09-01 |
| publisher | University of Zakho |
| record_format | Article |
| series | Science Journal of University of Zakho |
| spelling | doaj.art-96f046ccaf4d453b87eeb3306a1015fe2022-12-22T03:26:42ZengUniversity of ZakhoScience Journal of University of Zakho2663-628X2663-62982013-09-0112874881448Theoretical and Empirical Comparison of Electrical Properties of Porous SiliconAhmed Kh. AL-Kadumi0Alwan M. Alwan1Ali H. Al-Batat2University of ZakhoAl-Technology UniversityAl-Mustansirya UniversityThe present work is the study of the dark current density for porous silicon which is prepared by photo-electrochemical etching for n-type silicon by using laser power density of (10mw/cm2)and wavelength(650nm) under different anodization time(50,60)minute. ,The results obtained from this study shows different characteristics that of porous for the different porous Silicon layers. The empirical data of J-V characteristics are compared by using mathematical(a Poole-Frenkel-like, Schottky diode) models prepared the with assistance of Matlab program.https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448The |
| spellingShingle | Ahmed Kh. AL-Kadumi Alwan M. Alwan Ali H. Al-Batat Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon Science Journal of University of Zakho The |
| title | Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon |
| title_full | Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon |
| title_fullStr | Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon |
| title_full_unstemmed | Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon |
| title_short | Theoretical and Empirical Comparison of Electrical Properties of Porous Silicon |
| title_sort | theoretical and empirical comparison of electrical properties of porous silicon |
| topic | The |
| url | https://sjuoz.uoz.edu.krd/index.php/sjuoz/article/view/448 |
| work_keys_str_mv | AT ahmedkhalkadumi theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon AT alwanmalwan theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon AT alihalbatat theoreticalandempiricalcomparisonofelectricalpropertiesofporoussilicon |