Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System
Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9113250/ |
| _version_ | 1830360234358472704 |
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| author | Chankeun Yoon Jinhong Min Jaemin Shin Changhwan Shin |
| author_facet | Chankeun Yoon Jinhong Min Jaemin Shin Changhwan Shin |
| author_sort | Chankeun Yoon |
| collection | DOAJ |
| description | Previous studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO<sub>2</sub>-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization (P<sub>r</sub>) and coercive field (E<sub>c</sub>)] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the Pr and Ec values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by E<sub>c</sub> rather than Pr and decrease as Ec increases. The device design guideline with appropriate Pr and Ec values of the HfO<sub>2</sub>-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices. |
| first_indexed | 2024-12-20T03:13:44Z |
| format | Article |
| id | doaj.art-971f96633ea34ffda970fcc0b061dee7 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-20T03:13:44Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-971f96633ea34ffda970fcc0b061dee72022-12-21T19:55:24ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01860861310.1109/JEDS.2020.30012729113250Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical SystemChankeun Yoon0Jinhong Min1Jaemin Shin2Changhwan Shin3Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaDepartment of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South KoreaPrevious studies have suggested that the operating voltage and energy-delay properties of a nanoelectromechanical (NEM) system can be improved using the negative capacitance (NC) effect of ferroelectric materials. However, the advantages of using the NC effects alone have been utilized for perovskite ferroelectric materials, which is incompatible in complementary metal-oxide-semiconductor (CMOS) fabrication processes. In this work, a CMOS-compatible HfO<sub>2</sub>-based ferroelectric material is used for the NC + NEM system. The effects of the ferroelectric properties [i.e., remnant polarization (P<sub>r</sub>) and coercive field (E<sub>c</sub>)] on the NC + NEM system performance are studied in detail. The results show that the NC + NEM system can operate as a relay or a memory device depending on the Pr and Ec values. Moreover, the pull-in/out voltages of the NC + NEM system are more sensitively affected by E<sub>c</sub> rather than Pr and decrease as Ec increases. The device design guideline with appropriate Pr and Ec values of the HfO<sub>2</sub>-based ferroelectric material is thus developed and discussed to improve the electrical characteristics of NC + NEM relay/memory devices.https://ieeexplore.ieee.org/document/9113250/Coercive fieldferroelectric capacitornanoelectromechanical systemnegative capacitanceremnant polarization |
| spellingShingle | Chankeun Yoon Jinhong Min Jaemin Shin Changhwan Shin Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System IEEE Journal of the Electron Devices Society Coercive field ferroelectric capacitor nanoelectromechanical system negative capacitance remnant polarization |
| title | Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System |
| title_full | Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System |
| title_fullStr | Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System |
| title_full_unstemmed | Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System |
| title_short | Device Design Guideline for HfO₂-Based Ferroelectric-Gated Nanoelectromechanical System |
| title_sort | device design guideline for hfo x2082 based ferroelectric gated nanoelectromechanical system |
| topic | Coercive field ferroelectric capacitor nanoelectromechanical system negative capacitance remnant polarization |
| url | https://ieeexplore.ieee.org/document/9113250/ |
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