Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent
Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained by the formation of a loose high-resistan...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | Russian |
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MIREA - Russian Technological University
2012-08-01
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| Series: | Тонкие химические технологии |
| Subjects: | |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/722 |
| _version_ | 1797882123118444544 |
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| author | E. A. Shelonin A. M. Kort A. G. Yakovenko A. A. Gvelesiani E. N. Abramova |
| author_facet | E. A. Shelonin A. M. Kort A. G. Yakovenko A. A. Gvelesiani E. N. Abramova |
| author_sort | E. A. Shelonin |
| collection | DOAJ |
| description | Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained by the formation of a loose high-resistance layer of complex fluorides and silicon oxides on the surface of the silicon substrate, as well as by differences in the nature of n- and p-type silicon etching. |
| first_indexed | 2024-04-10T03:31:04Z |
| format | Article |
| id | doaj.art-972302901bfa4fc58b6df43988e85571 |
| institution | Directory Open Access Journal |
| issn | 2410-6593 2686-7575 |
| language | Russian |
| last_indexed | 2024-04-10T03:31:04Z |
| publishDate | 2012-08-01 |
| publisher | MIREA - Russian Technological University |
| record_format | Article |
| series | Тонкие химические технологии |
| spelling | doaj.art-972302901bfa4fc58b6df43988e855712023-03-13T07:25:33ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752012-08-01748487716Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agentE. A. Shelonin0A. M. Kort1A. G. Yakovenko2A. A. Gvelesiani3E. N. Abramova4МИТХТ им. М.В. ЛомоносоваМИТХТ им. М.В. ЛомоносоваM.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained by the formation of a loose high-resistance layer of complex fluorides and silicon oxides on the surface of the silicon substrate, as well as by differences in the nature of n- and p-type silicon etching.https://www.finechem-mirea.ru/jour/article/view/722nanoporous siliconelectrochemical etchingpulsationthin surface layergalvanostatic modepulsationhigh-ohmic layer |
| spellingShingle | E. A. Shelonin A. M. Kort A. G. Yakovenko A. A. Gvelesiani E. N. Abramova Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent Тонкие химические технологии nanoporous silicon electrochemical etching pulsation thin surface layer galvanostatic mode pulsation high-ohmic layer |
| title | Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent |
| title_full | Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent |
| title_fullStr | Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent |
| title_full_unstemmed | Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent |
| title_short | Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent |
| title_sort | specific features of electrochemical polishing etch of single crystal silicon in a non oxidizing etching agent |
| topic | nanoporous silicon electrochemical etching pulsation thin surface layer galvanostatic mode pulsation high-ohmic layer |
| url | https://www.finechem-mirea.ru/jour/article/view/722 |
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