A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area

There is an increasing demand for high-performance global shutter pixels for CMOS image sensor (CIS) in the high-end imaging field. The existing global pixels have disadvantages, such as low sensitivity, high dark current, and large pixel area. In the present work, we developed a novel 9T global shu...

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Main Authors: Xueqiang Gu, Hao Zhu, Lin Chen, Qingqing Sun, David Wei Zhang
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/12/4/880
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author Xueqiang Gu
Hao Zhu
Lin Chen
Qingqing Sun
David Wei Zhang
author_facet Xueqiang Gu
Hao Zhu
Lin Chen
Qingqing Sun
David Wei Zhang
author_sort Xueqiang Gu
collection DOAJ
description There is an increasing demand for high-performance global shutter pixels for CMOS image sensor (CIS) in the high-end imaging field. The existing global pixels have disadvantages, such as low sensitivity, high dark current, and large pixel area. In the present work, we developed a novel 9T global shutter CIS pixel with a much smaller pixel pitch of 2.8 μm. To our knowledge, it is the most miniature reported 9T global shutter CIS pixel. The developed 9T global shutter CIS pixel shows an excellent low dark current by the strategy of merging active area, which is 38 e<sup>−</sup>/s. Moreover, the cross-talk, sensitivity, read noise, dynamic range and full well capacity show performance. The current strategy is expected to be helpful in further improving the performance of other kinds of CIS pixels.
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spelling doaj.art-9723e07f2d56493fb10e40fbd61459222023-11-16T20:11:23ZengMDPI AGElectronics2079-92922023-02-0112488010.3390/electronics12040880A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active AreaXueqiang Gu0Hao Zhu1Lin Chen2Qingqing Sun3David Wei Zhang4School of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaThere is an increasing demand for high-performance global shutter pixels for CMOS image sensor (CIS) in the high-end imaging field. The existing global pixels have disadvantages, such as low sensitivity, high dark current, and large pixel area. In the present work, we developed a novel 9T global shutter CIS pixel with a much smaller pixel pitch of 2.8 μm. To our knowledge, it is the most miniature reported 9T global shutter CIS pixel. The developed 9T global shutter CIS pixel shows an excellent low dark current by the strategy of merging active area, which is 38 e<sup>−</sup>/s. Moreover, the cross-talk, sensitivity, read noise, dynamic range and full well capacity show performance. The current strategy is expected to be helpful in further improving the performance of other kinds of CIS pixels.https://www.mdpi.com/2079-9292/12/4/880global shutter pixeldark currentmerged active area9T
spellingShingle Xueqiang Gu
Hao Zhu
Lin Chen
Qingqing Sun
David Wei Zhang
A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
Electronics
global shutter pixel
dark current
merged active area
9T
title A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
title_full A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
title_fullStr A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
title_full_unstemmed A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
title_short A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area
title_sort novel low dark current 9t global shutter pixel with merged active area
topic global shutter pixel
dark current
merged active area
9T
url https://www.mdpi.com/2079-9292/12/4/880
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