CVD PREPARED Mn-DOPED ZnO NANOWIRES
Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and R...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Universiti Brunei Darussalam
2017-11-01
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| Series: | ASEAN Journal on Science and Technology for Development |
| Subjects: | |
| Online Access: | http://www.ajstd.org/index.php/ajstd/article/view/191 |
| _version_ | 1797334151974617088 |
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| author | T.L. Phan R. Vincent D. Cherns N.X. Nghia |
| author_facet | T.L. Phan R. Vincent D. Cherns N.X. Nghia |
| author_sort | T.L. Phan |
| collection | DOAJ |
| description | Mn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and Raman scattering (RS) spectra are almost independent of the Mn doping. However, the increase in concentration of Mn above 1.6 at% weakens significantly the PL signal and the RS-lines intensity in the low wavenumber range of 300–480 cm-1, and concurrently increases the RS-lines intensity in the higher wavenumber range of 480-700 cm-1.. Magnetic measurements determined the Curie temperature of Mn-doped ZnO nanowire to be about 37 K. |
| first_indexed | 2024-03-08T08:15:36Z |
| format | Article |
| id | doaj.art-9728429ef56b46fdab540bb88e8cc82a |
| institution | Directory Open Access Journal |
| issn | 0217-5460 2224-9028 |
| language | English |
| last_indexed | 2024-03-08T08:15:36Z |
| publishDate | 2017-11-01 |
| publisher | Universiti Brunei Darussalam |
| record_format | Article |
| series | ASEAN Journal on Science and Technology for Development |
| spelling | doaj.art-9728429ef56b46fdab540bb88e8cc82a2024-02-02T07:30:16ZengUniversiti Brunei DarussalamASEAN Journal on Science and Technology for Development0217-54602224-90282017-11-01241&212513010.29037/ajstd.191186CVD PREPARED Mn-DOPED ZnO NANOWIREST.L. Phan0R. Vincent1D. Cherns2N.X. Nghia3Microstructures Group, Department of Physics, University of Bristol, Bristol BS8 1TLMicrostructures Group, Department of Physics, University of Bristol, Bristol BS8 1TLMicrostructures Group, Department of Physics, University of Bristol, Bristol BS8 1TLInstitute of Materials Science, Academy of Science and Technology (VAST), HanoiMn-doped ZnO nanowires prepared by chemical vapor deposition (CVD) were obtained in the temperature range of 450–500°C. X-ray diffraction patterns, SEM and TEM images indicate that crystals with a hexagonal structure grow along the c axis. At low Mn-doped concentrations, photoluminescence (PL) and Raman scattering (RS) spectra are almost independent of the Mn doping. However, the increase in concentration of Mn above 1.6 at% weakens significantly the PL signal and the RS-lines intensity in the low wavenumber range of 300–480 cm-1, and concurrently increases the RS-lines intensity in the higher wavenumber range of 480-700 cm-1.. Magnetic measurements determined the Curie temperature of Mn-doped ZnO nanowire to be about 37 K.http://www.ajstd.org/index.php/ajstd/article/view/191Mn-doped ZnOspintronics materials |
| spellingShingle | T.L. Phan R. Vincent D. Cherns N.X. Nghia CVD PREPARED Mn-DOPED ZnO NANOWIRES ASEAN Journal on Science and Technology for Development Mn-doped ZnO spintronics materials |
| title | CVD PREPARED Mn-DOPED ZnO NANOWIRES |
| title_full | CVD PREPARED Mn-DOPED ZnO NANOWIRES |
| title_fullStr | CVD PREPARED Mn-DOPED ZnO NANOWIRES |
| title_full_unstemmed | CVD PREPARED Mn-DOPED ZnO NANOWIRES |
| title_short | CVD PREPARED Mn-DOPED ZnO NANOWIRES |
| title_sort | cvd prepared mn doped zno nanowires |
| topic | Mn-doped ZnO spintronics materials |
| url | http://www.ajstd.org/index.php/ajstd/article/view/191 |
| work_keys_str_mv | AT tlphan cvdpreparedmndopedznonanowires AT rvincent cvdpreparedmndopedznonanowires AT dcherns cvdpreparedmndopedznonanowires AT nxnghia cvdpreparedmndopedznonanowires |